This work reports on SiGe HBT technology withf max and f T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f max and f T both of which exhibit 300 GHz and above. Associated BV CEO and BV CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f max and f T values are also discussed.
|Number of pages
|Technical Digest - International Electron Devices Meeting, IEDM
|Published - 2004
|IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 13 → 2004 Dec 15
Bibliographical noteFunding Information:
The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014, The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Kaqn Hurley, and Robert Groves for their support in device process and test.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry