SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps

M. Khater, J. S. Rieh, T. Adam, A. Chinthakindi, J. Johnson, R. Krishnasamy, M. Meghelli, F. Pagette, D. Sanderson, C. Schnabel, K. T. Schonenberg, P. Smith, K. Stein, A. Stricker, S. J. Jeng, D. Ahlgren, G. Freeman

Research output: Contribution to journalConference articlepeer-review

92 Citations (Scopus)


This work reports on SiGe HBT technology withf max and f T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f max and f T both of which exhibit 300 GHz and above. Associated BV CEO and BV CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f max and f T values are also discussed.

Original languageEnglish
Pages (from-to)247-250
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

Bibliographical note

Funding Information:
The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014, The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Kaqn Hurley, and Robert Groves for their support in device process and test.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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