SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps

M. Khater; J. S. Rieh; T. Adam; A. Chinthakindi; J. Johnson; R. Krishnasamy; M. Meghelli; F. Pagette; D. Sanderson; C. Schnabel; K. T. Schonenberg; P. Smith; K. Stein; A. Stricker; S. J. Jeng; D. Ahlgren; G. Freeman

SiGe HBT technology with f _max/f _T = 350/300 GHz and gate delay below 3.3 ps

M. Khater^*, J. S. Rieh, T. Adam, A. Chinthakindi, J. Johnson, R. Krishnasamy, M. Meghelli, F. Pagette, D. Sanderson, C. Schnabel, K. T. Schonenberg, P. Smith, K. Stein, A. Stricker, S. J. Jeng, D. Ahlgren, G. Freeman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

89 Citations (Scopus)

Abstract

This work reports on SiGe HBT technology withf _max and f _T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f _max and f _T both of which exhibit 300 GHz and above. Associated BV _CEO and BV _CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f _max and f _T values are also discussed.

Original language	English
Pages (from-to)	247-250
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Publication status	Published - 2004
Externally published	Yes
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 2004 Dec 13 → 2004 Dec 15

Bibliographical note

Funding Information:
The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014, The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Kaqn Hurley, and Robert Groves for their support in device process and test.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Khater, M., Rieh, J. S., Adam, T., Chinthakindi, A., Johnson, J., Krishnasamy, R., Meghelli, M., Pagette, F., Sanderson, D., Schnabel, C., Schonenberg, K. T., Smith, P., Stein, K., Stricker, A., Jeng, S. J., Ahlgren, D., & Freeman, G. (2004). SiGe HBT technology with f _max/f _T = 350/300 GHz and gate delay below 3.3 ps. Technical Digest - International Electron Devices Meeting, IEDM, 247-250.

Khater, M, Rieh, JS, Adam, T, Chinthakindi, A, Johnson, J, Krishnasamy, R, Meghelli, M, Pagette, F, Sanderson, D, Schnabel, C, Schonenberg, KT, Smith, P, Stein, K, Stricker, A, Jeng, SJ, Ahlgren, D & Freeman, G 2004, 'SiGe HBT technology with f _max/f _T = 350/300 GHz and gate delay below 3.3 ps', Technical Digest - International Electron Devices Meeting, IEDM, pp. 247-250.

@article{a1a5e4e443f94c23b6c1164f6f8a5de9,

title = "SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps",

abstract = "This work reports on SiGe HBT technology withf max and f T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f max and f T both of which exhibit 300 GHz and above. Associated BV CEO and BV CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f max and f T values are also discussed.",

author = "M. Khater and Rieh, \{J. S.\} and T. Adam and A. Chinthakindi and J. Johnson and R. Krishnasamy and M. Meghelli and F. Pagette and D. Sanderson and C. Schnabel and Schonenberg, \{K. T.\} and P. Smith and K. Stein and A. Stricker and Jeng, \{S. J.\} and D. Ahlgren and G. Freeman",

note = "Funding Information: The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014, The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Kaqn Hurley, and Robert Groves for their support in device process and test.; IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

year = "2004",

language = "English",

pages = "247--250",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - SiGe HBT technology with f max/f T = 350/300 GHz and gate delay below 3.3 ps

AU - Khater, M.

AU - Rieh, J. S.

AU - Adam, T.

AU - Chinthakindi, A.

AU - Johnson, J.

AU - Krishnasamy, R.

AU - Meghelli, M.

AU - Pagette, F.

AU - Sanderson, D.

AU - Schnabel, C.

AU - Schonenberg, K. T.

AU - Smith, P.

AU - Stein, K.

AU - Stricker, A.

AU - Jeng, S. J.

AU - Ahlgren, D.

AU - Freeman, G.

N1 - Funding Information: The authors would like to acknowledge partial support of this work by DARPA under SPAWAR contract number N66001-02-C-8014, The authors also would like to thank Joseph Kocis, David Rockwell, Michael Longstreet, Kaqn Hurley, and Robert Groves for their support in device process and test.

PY - 2004

Y1 - 2004

N2 - This work reports on SiGe HBT technology withf max and f T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f max and f T both of which exhibit 300 GHz and above. Associated BV CEO and BV CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f max and f T values are also discussed.

AB - This work reports on SiGe HBT technology withf max and f T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f max and f T both of which exhibit 300 GHz and above. Associated BV CEO and BV CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f max and f T values are also discussed.

UR - https://www.scopus.com/pages/publications/21644474327

M3 - Conference article

AN - SCOPUS:21644474327

SN - 0163-1918

SP - 247

EP - 250

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

SiGe HBT technology with f _max/f _T = 350/300 GHz and gate delay below 3.3 ps

Abstract

Bibliographical note

ASJC Scopus subject areas

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