SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v

Jae Sung Rieh; Marwan Khater; Greg Freeman; David Ahlgren

doi:10.1109/TED.2006.879679

SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f _max = 310 GHz and BV_CEo = 2 v

Jae Sung Rieh, Marwan Khater, Greg Freeman, David Ahlgren

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak f_max of 310 GHz at the collector-current density of 7 mA/μm² and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.

Original language	English
Pages (from-to)	2407-2409
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	9
DOIs	https://doi.org/10.1109/TED.2006.879679
Publication status	Published - 2006 Sept

Keywords

Breakdown voltage (BV)
Heterojunction bipolar transistors (HBTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2006.879679

Cite this

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title = "SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v",

abstract = "Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.",

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AU - Rieh, Jae Sung

AU - Khater, Marwan

AU - Freeman, Greg

AU - Ahlgren, David

PY - 2006/9

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AB - Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed.

KW - Breakdown voltage (BV)

KW - Heterojunction bipolar transistors (HBTs)

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DO - 10.1109/TED.2006.879679

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