Abstract
Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f T and f max of > 300 GHz are developed. To the author's knowledge, this is the first report of f T and f max both exceeding 300 GHz for any Si-based transistor. BV CEO and BV CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.
Original language | English |
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Pages | 395-398 |
Number of pages | 4 |
Publication status | Published - 2004 |
Externally published | Yes |
Event | Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States Duration: 2004 Jun 6 → 2004 Jun 8 |
Other
Other | Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium |
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Country/Territory | United States |
City | Fort Worth, TX |
Period | 04/6/6 → 04/6/8 |
Keywords
- High-speed
- Millimeter-wave
- Noise
- SiGe heterojunction bipolar transistor
ASJC Scopus subject areas
- General Engineering