SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

J. S. Rieh; D. Greenberg; M. Khater; K. T. Schonenberg; S. J. Jeng; F. Pagette; T. Adam; A. Chinthakindi; J. Florkey; B. Jagannathan; J. Johnson; R. Krishnasamy; D. Sanderson; C. Schnabel; P. Smith; A. Stricker; S. Sweeney; K. Vaed; T. Yanagisawa; D. Ahlgren; K. Stein; G. Freeman

SiGe HBTs for millimeter-wave applications with simultaneously optimized f _T and f _max of 300 GHz

J. S. Rieh^*
, D. Greenberg
, M. Khater
, K. T. Schonenberg
, S. J. Jeng
, F. Pagette
, T. Adam
, A. Chinthakindi
, J. Florkey
, B. Jagannathan
, J. Johnson
, R. Krishnasamy
, D. Sanderson
, C. Schnabel
, P. Smith
, A. Stricker
, S. Sweeney
, K. Vaed
, T. Yanagisawa
, D. Ahlgren

K. Stein, G. Freeman

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

57 Citations (Scopus)

Abstract

Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f _T and f _max of > 300 GHz are developed. To the author's knowledge, this is the first report of f _T and f _max both exceeding 300 GHz for any Si-based transistor. BV _CEO and BV _CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F _min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.

Original language	English
Pages	395-398
Number of pages	4
Publication status	Published - 2004
Externally published	Yes
Event	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States Duration: 2004 Jun 6 → 2004 Jun 8

Other

Other	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Fort Worth, TX
Period	04/6/6 → 04/6/8

Keywords

High-speed
Millimeter-wave
Noise
SiGe heterojunction bipolar transistor

ASJC Scopus subject areas

General Engineering

Cite this

Rieh, J. S., Greenberg, D., Khater, M., Schonenberg, K. T., Jeng, S. J., Pagette, F., Adam, T., Chinthakindi, A., Florkey, J., Jagannathan, B., Johnson, J., Krishnasamy, R., Sanderson, D., Schnabel, C., Smith, P., Stricker, A., Sweeney, S., Vaed, K., Yanagisawa, T., ... Freeman, G. (2004). SiGe HBTs for millimeter-wave applications with simultaneously optimized f _T and f _max of 300 GHz. 395-398. Paper presented at Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, United States.

Rieh, JS, Greenberg, D, Khater, M, Schonenberg, KT, Jeng, SJ, Pagette, F, Adam, T, Chinthakindi, A, Florkey, J, Jagannathan, B, Johnson, J, Krishnasamy, R, Sanderson, D, Schnabel, C, Smith, P, Stricker, A, Sweeney, S, Vaed, K, Yanagisawa, T, Ahlgren, D, Stein, K & Freeman, G 2004, 'SiGe HBTs for millimeter-wave applications with simultaneously optimized f _T and f _max of 300 GHz', Paper presented at Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, United States, 04/6/6 - 04/6/8 pp. 395-398.

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title = "SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz",

abstract = "Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f T and f max of > 300 GHz are developed. To the author's knowledge, this is the first report of f T and f max both exceeding 300 GHz for any Si-based transistor. BV CEO and BV CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.",

keywords = "High-speed, Millimeter-wave, Noise, SiGe heterojunction bipolar transistor",

author = "Rieh, \{J. S.\} and D. Greenberg and M. Khater and Schonenberg, \{K. T.\} and Jeng, \{S. J.\} and F. Pagette and T. Adam and A. Chinthakindi and J. Florkey and B. Jagannathan and J. Johnson and R. Krishnasamy and D. Sanderson and C. Schnabel and P. Smith and A. Stricker and S. Sweeney and K. Vaed and T. Yanagisawa and D. Ahlgren and K. Stein and G. Freeman",

year = "2004",

language = "English",

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T1 - SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz

AU - Rieh, J. S.

AU - Greenberg, D.

AU - Khater, M.

AU - Schonenberg, K. T.

AU - Jeng, S. J.

AU - Pagette, F.

AU - Adam, T.

AU - Chinthakindi, A.

AU - Florkey, J.

AU - Jagannathan, B.

AU - Johnson, J.

AU - Krishnasamy, R.

AU - Sanderson, D.

AU - Schnabel, C.

AU - Smith, P.

AU - Stricker, A.

AU - Sweeney, S.

AU - Vaed, K.

AU - Yanagisawa, T.

AU - Ahlgren, D.

AU - Stein, K.

AU - Freeman, G.

PY - 2004

Y1 - 2004

N2 - Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f T and f max of > 300 GHz are developed. To the author's knowledge, this is the first report of f T and f max both exceeding 300 GHz for any Si-based transistor. BV CEO and BV CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.

AB - Millimeter-wave applications are gaining growing interest in recent times. To meet the challenges for such applications, SiGe HBTs with simultaneously optimized f T and f max of > 300 GHz are developed. To the author's knowledge, this is the first report of f T and f max both exceeding 300 GHz for any Si-based transistor. BV CEO and BV CBO are 1.6 V and 5.5 V, respectively, with peak current gain of 660. Noise measurement shows F min of 0.45 dB and 1.4 dB at 10GHz and 25 GHz with associate gain of 14 dB and 8 dB, respectively. The results indicate SiGe HBTs are highly suitable for the rapidly expanding millimeter-wave applications.

KW - High-speed

KW - Millimeter-wave

KW - Noise

KW - SiGe heterojunction bipolar transistor

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M3 - Paper

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T2 - Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

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