SiGe HBTs with cut-off frequency of 350 GHz

J. S. Rieh; B. Jagannathan; H. Chen; K. T. Schonenberg; D. Angell; A. Chinthakindi; J. Florkey; F. Golan; D. Greenberg; S. J. Jeng; M. Khater; F. Pagette; C. Schnabel; P. Smith; A. Stricker; K. Vaed; R. Volant; D. Ahlgren; G. Freeman; K. Stein; S. Subbanna

SiGe HBTs with cut-off frequency of 350 GHz

J. S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S. J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. SteinS. Subbanna

Research output: Contribution to journal › Conference article › peer-review

197 Citations (Scopus)

Abstract

This work reports on SiGe HBTs with f_T of 350 GHz. This is the highest reported f_T for any Si-based transistor as well as any bipolar transistor. Associated f_max is 170 GHz, and BV_CEO and BV_CBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f_T and f_max, resulting in 270 GHz and 260 GHz, with BV_CEO and BV_CBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f_T and f_max values are also discussed.

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2002
Externally published	Yes
Event	2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 2002 Dec 8 → 2002 Dec 11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Rieh, J. S., Jagannathan, B., Chen, H., Schonenberg, K. T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S. J., Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K., Volant, R., Ahlgren, D., Freeman, G., ... Subbanna, S. (2002). SiGe HBTs with cut-off frequency of 350 GHz. Technical Digest - International Electron Devices Meeting, 771-774.

Rieh, JS, Jagannathan, B, Chen, H, Schonenberg, KT, Angell, D, Chinthakindi, A, Florkey, J, Golan, F, Greenberg, D, Jeng, SJ, Khater, M, Pagette, F, Schnabel, C, Smith, P, Stricker, A, Vaed, K, Volant, R, Ahlgren, D, Freeman, G, Stein, K & Subbanna, S 2002, 'SiGe HBTs with cut-off frequency of 350 GHz', Technical Digest - International Electron Devices Meeting, pp. 771-774.

@article{70b04721f28045a9aae25d73a3a725a1,

title = "SiGe HBTs with cut-off frequency of 350 GHz",

abstract = "This work reports on SiGe HBTs with fT of 350 GHz. This is the highest reported fT for any Si-based transistor as well as any bipolar transistor. Associated fmax is 170 GHz, and BVCEO and BVCBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of fT and fmax, resulting in 270 GHz and 260 GHz, with BVCEO and BVCBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high fT and fmax values are also discussed.",

author = "Rieh, {J. S.} and B. Jagannathan and H. Chen and Schonenberg, {K. T.} and D. Angell and A. Chinthakindi and J. Florkey and F. Golan and D. Greenberg and Jeng, {S. J.} and M. Khater and F. Pagette and C. Schnabel and P. Smith and A. Stricker and K. Vaed and R. Volant and D. Ahlgren and G. Freeman and K. Stein and S. Subbanna",

year = "2002",

language = "English",

pages = "771--774",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Devices Meeting (IEDM) ; Conference date: 08-12-2002 Through 11-12-2002",

}

TY - JOUR

T1 - SiGe HBTs with cut-off frequency of 350 GHz

AU - Rieh, J. S.

AU - Jagannathan, B.

AU - Chen, H.

AU - Schonenberg, K. T.

AU - Angell, D.

AU - Chinthakindi, A.

AU - Florkey, J.

AU - Golan, F.

AU - Greenberg, D.

AU - Jeng, S. J.

AU - Khater, M.

AU - Pagette, F.

AU - Schnabel, C.

AU - Smith, P.

AU - Stricker, A.

AU - Vaed, K.

AU - Volant, R.

AU - Ahlgren, D.

AU - Freeman, G.

AU - Stein, K.

AU - Subbanna, S.

PY - 2002

Y1 - 2002

N2 - This work reports on SiGe HBTs with fT of 350 GHz. This is the highest reported fT for any Si-based transistor as well as any bipolar transistor. Associated fmax is 170 GHz, and BVCEO and BVCBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of fT and fmax, resulting in 270 GHz and 260 GHz, with BVCEO and BVCBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high fT and fmax values are also discussed.

AB - This work reports on SiGe HBTs with fT of 350 GHz. This is the highest reported fT for any Si-based transistor as well as any bipolar transistor. Associated fmax is 170 GHz, and BVCEO and BVCBO are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of fT and fmax, resulting in 270 GHz and 260 GHz, with BVCEO and BVCBO of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high fT and fmax values are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0036927963&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036927963

SN - 0163-1918

SP - 771

EP - 774

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 2002 IEEE International Devices Meeting (IEDM)

Y2 - 8 December 2002 through 11 December 2002

ER -

SiGe HBTs with cut-off frequency of 350 GHz

Abstract

ASJC Scopus subject areas

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