SiGe HBTs

Jae Sung Rieh; Omeed Momeni

doi:10.1007/978-3-030-73738-2_20

SiGe HBTs

Jae Sung Rieh^*
, Omeed Momeni

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

SiGe HBTs (heterojunction bipolar transistors) are a type of Si-based BJTs (bipolar junction transistors) that employ a SiGe alloy layer as a part of the device, typically as the base layer. Since its first demonstration in 1987, SiGe HBTs have become a mainstream Si bipolar transistor and are now widely employed for various high-frequency applications. In this chapter, a brief overview of SiGe HBTs is provided. Firstly, the DC characteristics are described in terms of the collector current and current gain, with focus on the comparison with Si BJTs and the origin of the advantages. A review on the definition of various breakdown voltages will be also presented along with device parameters that affect the breakdown voltages. Secondly, the RF characteristics of SiGe HBTs will be discussed in terms of f_T (cutoff frequency) and f_max (maximum oscillation frequency). Additional discussion will be made on high-frequency noise and 1/f noise of SiGe HBTs. Lastly, a couple of exemplary SiGe HBTs and circuits will be introduced to provide the practical aspect of modern high-performance SiGe HBTs.

Original language	English
Title of host publication	Springer Series in Optical Sciences
Publisher	Springer Science and Business Media Deutschland GmbH
Pages	201-234
Number of pages	34
DOIs	https://doi.org/10.1007/978-3-030-73738-2_20
Publication status	Published - 2022

Publication series

Name	Springer Series in Optical Sciences
Volume	234
ISSN (Print)	0342-4111
ISSN (Electronic)	1556-1534

Bibliographical note

Publisher Copyright:
© 2022, Springer Nature Switzerland AG.

Keywords

Amplifier
Beam steering
Communication
Oscillator
Phased array
Radiator array
Scalable array
SiGe HBT
Standing waves
Terahertz
Transceiver
Voltage-controlled oscillator (VCO)
Wideband

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1007/978-3-030-73738-2_20

Cite this

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title = "SiGe HBTs",

abstract = "SiGe HBTs (heterojunction bipolar transistors) are a type of Si-based BJTs (bipolar junction transistors) that employ a SiGe alloy layer as a part of the device, typically as the base layer. Since its first demonstration in 1987, SiGe HBTs have become a mainstream Si bipolar transistor and are now widely employed for various high-frequency applications. In this chapter, a brief overview of SiGe HBTs is provided. Firstly, the DC characteristics are described in terms of the collector current and current gain, with focus on the comparison with Si BJTs and the origin of the advantages. A review on the definition of various breakdown voltages will be also presented along with device parameters that affect the breakdown voltages. Secondly, the RF characteristics of SiGe HBTs will be discussed in terms of fT (cutoff frequency) and fmax (maximum oscillation frequency). Additional discussion will be made on high-frequency noise and 1/f noise of SiGe HBTs. Lastly, a couple of exemplary SiGe HBTs and circuits will be introduced to provide the practical aspect of modern high-performance SiGe HBTs.",

keywords = "Amplifier, Beam steering, Communication, Oscillator, Phased array, Radiator array, Scalable array, SiGe HBT, Standing waves, Terahertz, Transceiver, Voltage-controlled oscillator (VCO), Wideband",

author = "Rieh, \{Jae Sung\} and Omeed Momeni",

note = "Publisher Copyright: {\textcopyright} 2022, Springer Nature Switzerland AG.",

year = "2022",

doi = "10.1007/978-3-030-73738-2\_20",

language = "English",

series = "Springer Series in Optical Sciences",

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T1 - SiGe HBTs

AU - Rieh, Jae Sung

AU - Momeni, Omeed

PY - 2022

Y1 - 2022

N2 - SiGe HBTs (heterojunction bipolar transistors) are a type of Si-based BJTs (bipolar junction transistors) that employ a SiGe alloy layer as a part of the device, typically as the base layer. Since its first demonstration in 1987, SiGe HBTs have become a mainstream Si bipolar transistor and are now widely employed for various high-frequency applications. In this chapter, a brief overview of SiGe HBTs is provided. Firstly, the DC characteristics are described in terms of the collector current and current gain, with focus on the comparison with Si BJTs and the origin of the advantages. A review on the definition of various breakdown voltages will be also presented along with device parameters that affect the breakdown voltages. Secondly, the RF characteristics of SiGe HBTs will be discussed in terms of fT (cutoff frequency) and fmax (maximum oscillation frequency). Additional discussion will be made on high-frequency noise and 1/f noise of SiGe HBTs. Lastly, a couple of exemplary SiGe HBTs and circuits will be introduced to provide the practical aspect of modern high-performance SiGe HBTs.

AB - SiGe HBTs (heterojunction bipolar transistors) are a type of Si-based BJTs (bipolar junction transistors) that employ a SiGe alloy layer as a part of the device, typically as the base layer. Since its first demonstration in 1987, SiGe HBTs have become a mainstream Si bipolar transistor and are now widely employed for various high-frequency applications. In this chapter, a brief overview of SiGe HBTs is provided. Firstly, the DC characteristics are described in terms of the collector current and current gain, with focus on the comparison with Si BJTs and the origin of the advantages. A review on the definition of various breakdown voltages will be also presented along with device parameters that affect the breakdown voltages. Secondly, the RF characteristics of SiGe HBTs will be discussed in terms of fT (cutoff frequency) and fmax (maximum oscillation frequency). Additional discussion will be made on high-frequency noise and 1/f noise of SiGe HBTs. Lastly, a couple of exemplary SiGe HBTs and circuits will be introduced to provide the practical aspect of modern high-performance SiGe HBTs.

KW - Amplifier

KW - Beam steering

KW - Communication

KW - Oscillator

KW - Phased array

KW - Radiator array

KW - Scalable array

KW - SiGe HBT

KW - Standing waves

KW - Terahertz

KW - Transceiver

KW - Voltage-controlled oscillator (VCO)

KW - Wideband

UR - https://www.scopus.com/pages/publications/85121357614

U2 - 10.1007/978-3-030-73738-2_20

DO - 10.1007/978-3-030-73738-2_20

M3 - Chapter

AN - SCOPUS:85121357614

T3 - Springer Series in Optical Sciences

SP - 201

EP - 234

BT - Springer Series in Optical Sciences

PB - Springer Science and Business Media Deutschland GmbH

ER -

SiGe HBTs

Abstract

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Keywords

ASJC Scopus subject areas

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