SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

Jae Sung Rieh; Basanth Jagannathan; David R. Greenberg; Mounir Meghelli; Alexander Rylyakov; Fernando Guarin; Zhijian Yang; David C. Ahlgren; Greg Freeman; Peter Cottrell; David Harame

doi:10.1109/TMTT.2004.835984

SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

Jae Sung Rieh, Basanth Jagannathan, David R. Greenberg, Mounir Meghelli, Alexander Rylyakov, Fernando Guarin, Zhijian Yang, David C. Ahlgren, Greg Freeman, Peter Cottrell, David Harame

Research output: Contribution to journal › Article › peer-review

86 Citations (Scopus)

Abstract

The relatively less exploited terahertz band possesses great potential for a variety of important applications, including communication applications that would benefit from the enormous bandwidth within the terahertz spectrum. This paper overviews an approach toward terahertz applications based on SiGe heterojunction bipolar transistor (HBT) technology, focusing on broad-band communication applications. The design, characteristics, and reliability of SiGe HBTs exhibiting record f_T of 375 GHz and associated f _max of 210 GHz are presented. The impact of device optimization on noise characteristics is described for both low-frequency and broad-band noise. Circuit implementations of SiGe technologies are demonstrated with selected circuit blocks for broad-band communication systems, including a 3.9-ps emitter coupled logic ring oscillator, a 100-GHz frequency divider, 40-GHz voltage-controlled oscillator, and a 70-Gb/s 4:1 multiplexer. With no visible limitation for further enhancement of device speed at hand, the march toward terahertz band with Si-based technology will continue for the foreseeable future.

Original language	English
Pages (from-to)	2390-2408
Number of pages	19
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	52
Issue number	10
DOIs	https://doi.org/10.1109/TMTT.2004.835984
Publication status	Published - 2004 Oct

Bibliographical note

Funding Information:
Manuscript received May 5, 2003. This work was supported in part by the Defense Advanced Research Projects Agency under SPAWAR Contract N66001-02-C-8014.

Keywords

BiCMOS integrated circuits
Communication systems
Heterojunction bipolar transistors (HBTs)
High-speed integrated circuits

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TMTT.2004.835984

Cite this

Rieh, J. S., Jagannathan, B., Greenberg, D. R., Meghelli, M., Rylyakov, A., Guarin, F., Yang, Z., Ahlgren, D. C., Freeman, G., Cottrell, P., & Harame, D. (2004). SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications. IEEE Transactions on Microwave Theory and Techniques, 52(10), 2390-2408. https://doi.org/10.1109/TMTT.2004.835984

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abstract = "The relatively less exploited terahertz band possesses great potential for a variety of important applications, including communication applications that would benefit from the enormous bandwidth within the terahertz spectrum. This paper overviews an approach toward terahertz applications based on SiGe heterojunction bipolar transistor (HBT) technology, focusing on broad-band communication applications. The design, characteristics, and reliability of SiGe HBTs exhibiting record fT of 375 GHz and associated f max of 210 GHz are presented. The impact of device optimization on noise characteristics is described for both low-frequency and broad-band noise. Circuit implementations of SiGe technologies are demonstrated with selected circuit blocks for broad-band communication systems, including a 3.9-ps emitter coupled logic ring oscillator, a 100-GHz frequency divider, 40-GHz voltage-controlled oscillator, and a 70-Gb/s 4:1 multiplexer. With no visible limitation for further enhancement of device speed at hand, the march toward terahertz band with Si-based technology will continue for the foreseeable future.",

keywords = "BiCMOS integrated circuits, Communication systems, Heterojunction bipolar transistors (HBTs), High-speed integrated circuits",

author = "Rieh, {Jae Sung} and Basanth Jagannathan and Greenberg, {David R.} and Mounir Meghelli and Alexander Rylyakov and Fernando Guarin and Zhijian Yang and Ahlgren, {David C.} and Greg Freeman and Peter Cottrell and David Harame",

note = "Funding Information: Manuscript received May 5, 2003. This work was supported in part by the Defense Advanced Research Projects Agency under SPAWAR Contract N66001-02-C-8014.",

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AU - Guarin, Fernando

AU - Yang, Zhijian

AU - Ahlgren, David C.

AU - Freeman, Greg

AU - Cottrell, Peter

AU - Harame, David

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SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications

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Bibliographical note

Keywords

ASJC Scopus subject areas

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