SiGe-Si-based optoelectronic devices for high-speed communication applications

Pallab Bhattacharya; Omar Qasaimeh; Jae-Sung Rieh

doi:10.1109/SMIC.2001.942354

SiGe-Si-based optoelectronic devices for high-speed communication applications

Pallab Bhattacharya, Omar Qasaimeh, Jae-Sung Rieh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The principles and properties of some SiGe-Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. InGaAs-GaAs quantum dot lasers grown directly on Si also exhibit promising characteristics.

Original language	English
Title of host publication	2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	135-137
Number of pages	3
ISBN (Print)	0780371291, 9780780371293
DOIs	https://doi.org/10.1109/SMIC.2001.942354
Publication status	Published - 2001
Externally published	Yes
Event	3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001 - Ann Arbor, United States Duration: 2001 Sept 14 → …

Other

Other	3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001
Country/Territory	United States
City	Ann Arbor
Period	01/9/14 → …

Keywords

Bandwidth
Diodes
Gallium arsenide
Germanium silicon alloys
Heterojunction bipolar transistors
Optical amplifiers
Optoelectronic devices
Photodiodes
Silicon germanium
Solids

ASJC Scopus subject areas

General Computer Science

Access to Document

10.1109/SMIC.2001.942354

Cite this

SiGe-Si-based optoelectronic devices for high-speed communication applications. / Bhattacharya, Pallab; Qasaimeh, Omar; Rieh, Jae-Sung.
2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 135-137 942354.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Bhattacharya, P, Qasaimeh, O & Rieh, J-S 2001, SiGe-Si-based optoelectronic devices for high-speed communication applications. in 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001., 942354, Institute of Electrical and Electronics Engineers Inc., pp. 135-137, 3rd IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001, Ann Arbor, United States, 01/9/14. https://doi.org/10.1109/SMIC.2001.942354

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abstract = "The principles and properties of some SiGe-Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. InGaAs-GaAs quantum dot lasers grown directly on Si also exhibit promising characteristics.",

keywords = "Bandwidth, Diodes, Gallium arsenide, Germanium silicon alloys, Heterojunction bipolar transistors, Optical amplifiers, Optoelectronic devices, Photodiodes, Silicon germanium, Solids",

author = "Pallab Bhattacharya and Omar Qasaimeh and Jae-Sung Rieh",

year = "2001",

doi = "10.1109/SMIC.2001.942354",

language = "English",

isbn = "0780371291",

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KW - Bandwidth

KW - Diodes

KW - Gallium arsenide

KW - Germanium silicon alloys

KW - Heterojunction bipolar transistors

KW - Optical amplifiers

KW - Optoelectronic devices

KW - Photodiodes

KW - Silicon germanium

KW - Solids

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BT - 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2001

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ER -

SiGe-Si-based optoelectronic devices for high-speed communication applications

Abstract

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Keywords

ASJC Scopus subject areas

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