SiGe/Si Heterojunction Bipolar Transistors and Circuits

J. S. Rieh

doi:10.1016/B978-0-44-453153-7.00009-2

SiGe/Si Heterojunction Bipolar Transistors and Circuits

J. S. Rieh

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

With more than 20 years of history, the SiGe heterojunction bipolar transiston (HBT) is now a matured device, and its application to high-frequency circuits is proliferating. In this chapter, an overview of the SiGe HBTs and their various applications are presented. The basic principles of direct current and radio-frequency (RF) characteristics are described along with the high- and low-frequency noise properties of SiGe HBTs. In addition, various aspects of scaling and reliability issues are also provided. Finally, a variety of circuit examples for both mixed-signal and RF applications are overviewed. Along with the ample references provided, the chapter is expected to serve as an introductory guide to the general topics around SiGe HBTs.

Original language	English
Title of host publication	Comprehensive Semiconductor Science and Technology
Publisher	Elsevier Inc.
Pages	1-51
Number of pages	51
Volume	1-6
ISBN (Print)	9780444531537
DOIs	https://doi.org/10.1016/B978-0-44-453153-7.00009-2
Publication status	Published - 2011 Jan 1

Bibliographical note

Publisher Copyright:
© 2011 Elsevier B.V. All rights reserved.

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1016/B978-0-44-453153-7.00009-2

Cite this

@inbook{2eb2b6f1097b4fd3bfb1d514f85dd7cc,

title = "SiGe/Si Heterojunction Bipolar Transistors and Circuits",

abstract = "With more than 20 years of history, the SiGe heterojunction bipolar transiston (HBT) is now a matured device, and its application to high-frequency circuits is proliferating. In this chapter, an overview of the SiGe HBTs and their various applications are presented. The basic principles of direct current and radio-frequency (RF) characteristics are described along with the high- and low-frequency noise properties of SiGe HBTs. In addition, various aspects of scaling and reliability issues are also provided. Finally, a variety of circuit examples for both mixed-signal and RF applications are overviewed. Along with the ample references provided, the chapter is expected to serve as an introductory guide to the general topics around SiGe HBTs.",

author = "Rieh, {J. S.}",

year = "2011",

month = jan,

day = "1",

doi = "10.1016/B978-0-44-453153-7.00009-2",

language = "English",

isbn = "9780444531537",

volume = "1-6",

pages = "1--51",

booktitle = "Comprehensive Semiconductor Science and Technology",

publisher = "Elsevier Inc.",

}

TY - CHAP

T1 - SiGe/Si Heterojunction Bipolar Transistors and Circuits

AU - Rieh, J. S.

PY - 2011/1/1

Y1 - 2011/1/1

N2 - With more than 20 years of history, the SiGe heterojunction bipolar transiston (HBT) is now a matured device, and its application to high-frequency circuits is proliferating. In this chapter, an overview of the SiGe HBTs and their various applications are presented. The basic principles of direct current and radio-frequency (RF) characteristics are described along with the high- and low-frequency noise properties of SiGe HBTs. In addition, various aspects of scaling and reliability issues are also provided. Finally, a variety of circuit examples for both mixed-signal and RF applications are overviewed. Along with the ample references provided, the chapter is expected to serve as an introductory guide to the general topics around SiGe HBTs.

AB - With more than 20 years of history, the SiGe heterojunction bipolar transiston (HBT) is now a matured device, and its application to high-frequency circuits is proliferating. In this chapter, an overview of the SiGe HBTs and their various applications are presented. The basic principles of direct current and radio-frequency (RF) characteristics are described along with the high- and low-frequency noise properties of SiGe HBTs. In addition, various aspects of scaling and reliability issues are also provided. Finally, a variety of circuit examples for both mixed-signal and RF applications are overviewed. Along with the ample references provided, the chapter is expected to serve as an introductory guide to the general topics around SiGe HBTs.

UR - http://www.scopus.com/inward/record.url?scp=85042789826&partnerID=8YFLogxK

U2 - 10.1016/B978-0-44-453153-7.00009-2

DO - 10.1016/B978-0-44-453153-7.00009-2

M3 - Chapter

AN - SCOPUS:85042789826

SN - 9780444531537

VL - 1-6

SP - 1

EP - 51

BT - Comprehensive Semiconductor Science and Technology

PB - Elsevier Inc.

ER -

SiGe/Si Heterojunction Bipolar Transistors and Circuits

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this