Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Steve Park; Soo Jin Kim; Ji Hyun Nam; Gregory Pitner; Tae Hoon Lee; Alexander L. Ayzner; Huiliang Wang; Scott W. Fong; Michael Vosgueritchian; Young Jun Park; Mark L. Brongersma; Zhenan Bao

doi:10.1002/adma.201404544

Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C₆₀ phototransistor

Steve Park, Soo Jin Kim, Ji Hyun Nam, Gregory Pitner, Tae Hoon Lee, Alexander L. Ayzner, Huiliang Wang, Scott W. Fong, Michael Vosgueritchian, Young Jun Park, Mark L. Brongersma, Zhenan Bao

Research output: Contribution to journal › Article › peer-review

134 Citations (Scopus)

Abstract

(Figure Presented) A highly sensitive single-walled carbon nanotube/C₆₀-based infrared phototransistor is fabricated with a responsivity of 97.5 A W^-1 and detectivity of 1.17 × 10⁹ Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10⁴ with a response time of several milliseconds.

Original language	English
Pages (from-to)	759-765
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1002/adma.201404544
Publication status	Published - 2015 Jan 27
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 Wiley-VCH Verlag GmbH & Co. KGaA.

Keywords

Carbon nanotubes
Fullerene
Photodetectors
Transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201404544

Cite this

Park, S., Kim, S. J., Nam, J. H., Pitner, G., Lee, T. H., Ayzner, A. L., Wang, H., Fong, S. W., Vosgueritchian, M., Park, Y. J., Brongersma, M. L., & Bao, Z. (2015). Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C₆₀ phototransistor. Advanced Materials, 27(4), 759-765. https://doi.org/10.1002/adma.201404544

@article{20a3f03e899f41a6ae827308f305a7a4,

title = "Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor",

abstract = "(Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.",

keywords = "Carbon nanotubes, Fullerene, Photodetectors, Transistors",

author = "Steve Park and Kim, {Soo Jin} and Nam, {Ji Hyun} and Gregory Pitner and Lee, {Tae Hoon} and Ayzner, {Alexander L.} and Huiliang Wang and Fong, {Scott W.} and Michael Vosgueritchian and Park, {Young Jun} and Brongersma, {Mark L.} and Zhenan Bao",

note = "Publisher Copyright: {\textcopyright} 2014 Wiley-VCH Verlag GmbH & Co. KGaA.",

year = "2015",

month = jan,

day = "27",

doi = "10.1002/adma.201404544",

language = "English",

volume = "27",

pages = "759--765",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "4",

}

TY - JOUR

T1 - Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

AU - Park, Steve

AU - Kim, Soo Jin

AU - Nam, Ji Hyun

AU - Pitner, Gregory

AU - Lee, Tae Hoon

AU - Ayzner, Alexander L.

AU - Wang, Huiliang

AU - Fong, Scott W.

AU - Vosgueritchian, Michael

AU - Park, Young Jun

AU - Brongersma, Mark L.

AU - Bao, Zhenan

PY - 2015/1/27

Y1 - 2015/1/27

N2 - (Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

AB - (Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

KW - Carbon nanotubes

KW - Fullerene

KW - Photodetectors

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=85027956099&partnerID=8YFLogxK

U2 - 10.1002/adma.201404544

DO - 10.1002/adma.201404544

M3 - Article

AN - SCOPUS:85027956099

SN - 0935-9648

VL - 27

SP - 759

EP - 765

JO - Advanced Materials

JF - Advanced Materials

IS - 4

ER -