Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C60 phototransistor

Steve Park; Soo Jin Kim; Ji Hyun Nam; Gregory Pitner; Tae Hoon Lee; Alexander L. Ayzner; Huiliang Wang; Scott W. Fong; Michael Vosgueritchian; Young Jun Park; Mark L. Brongersma; Zhenan Bao

doi:10.1002/adma.201404544

Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C₆₀ phototransistor

Steve Park, Soo Jin Kim, Ji Hyun Nam, Gregory Pitner, Tae Hoon Lee, Alexander L. Ayzner, Huiliang Wang, Scott W. Fong, Michael Vosgueritchian, Young Jun Park, Mark L. Brongersma, Zhenan Bao

Research output: Contribution to journal › Article › peer-review

132 Citations (Scopus)

Abstract

(Figure Presented) A highly sensitive single-walled carbon nanotube/C₆₀-based infrared phototransistor is fabricated with a responsivity of 97.5 A W^-1 and detectivity of 1.17 × 10⁹ Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈10⁴ with a response time of several milliseconds.

Original language	English
Pages (from-to)	759-765
Number of pages	7
Journal	Advanced Materials
Volume	27
Issue number	4
DOIs	https://doi.org/10.1002/adma.201404544
Publication status	Published - 2015 Jan 27
Externally published	Yes

Keywords

Carbon nanotubes
Fullerene
Photodetectors
Transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201404544

Cite this

Park, S., Kim, S. J., Nam, J. H., Pitner, G., Lee, T. H., Ayzner, A. L., Wang, H., Fong, S. W., Vosgueritchian, M., Park, Y. J., Brongersma, M. L., & Bao, Z. (2015). Significant enhancement of infrared photodetector sensitivity using a semiconducting single-walled carbon nanotube/C₆₀ phototransistor. Advanced Materials, 27(4), 759-765. https://doi.org/10.1002/adma.201404544

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abstract = "(Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.",

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AU - Lee, Tae Hoon

AU - Ayzner, Alexander L.

AU - Wang, Huiliang

AU - Fong, Scott W.

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AU - Brongersma, Mark L.

AU - Bao, Zhenan

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AB - (Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.

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