Abstract
(Figure Presented) A highly sensitive single-walled carbon nanotube/C60-based infrared phototransistor is fabricated with a responsivity of 97.5 A W-1 and detectivity of 1.17 × 109 Jones at 1 kHz under a source/drain bias of -0.5 V. The much improved performance is enabled by this unique device architecture that enables a high photoconductive gain of ≈104 with a response time of several milliseconds.
Original language | English |
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Pages (from-to) | 759-765 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2015 Jan 27 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2014 Wiley-VCH Verlag GmbH & Co. KGaA.
Keywords
- Carbon nanotubes
- Fullerene
- Photodetectors
- Transistors
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering