Silicon-based metallic micro grid for electron field emission

Jaehong Kim, Seok Gy Jeon, Jung Il Kim, Geun Ju Kim, Duchang Heo, Dong Hoon Shin, Yuning Sun, Cheol Jin Lee

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


A micro-scale metal grid based on a silicon frame for application to electron field emission devices is introduced and experimentally demonstrated. A silicon lattice containing aperture holes with an area of 80 × 80 μm 2 and a thickness of 10 μm is precisely manufactured by dry etching the silicon on one side of a double-polished silicon wafer and by wet etching the opposite side. Because a silicon lattice is more rigid than a pure metal lattice, a thin layer of Au/Ti deposited on the silicon lattice for voltage application can be more resistant to the geometric stress caused by the applied electric field. The micro-fabrication process, the images of the fabricated grid with 88% geometric transparency and the surface profile measurement after thermal feasibility testing up to 700°C are presented.

Original languageEnglish
Article number105009
JournalJournal of Micromechanics and Microengineering
Issue number10
Publication statusPublished - 2012 Oct

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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