Silicon based micro-scale metal grid for field emission device

Jaehong Kim; Jung Il Kim; Geun Ju Kim; Duchang Heo; Seok Gy Jeon; Dong Hoon Shin; Yuning Sun; Cheol Jin Lee

doi:10.1109/IVNC.2012.6316932

Silicon based micro-scale metal grid for field emission device

Jaehong Kim, Jung Il Kim, Geun Ju Kim, Duchang Heo, Seok Gy Jeon, Dong Hoon Shin, Yuning Sun, Cheol Jin Lee

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

For application to electron field emission devices, a metal grid based on a silicon frame is introduced. Silicon frame is used to improve the thermal resistivity and electrical stability by electron beam. Silicon based micro-scale metal grid fabricated using MEMS technology.

Original language	English
Title of host publication	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om
Pages	278-279
Number of pages	2
DOIs	https://doi.org/10.1109/IVNC.2012.6316932
Publication status	Published - 2012
Event	25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju, Korea, Republic of Duration: 2012 Jul 9 → 2012 Jul 13

Publication series

Name	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Other

Other	25th International Vacuum Nanoelectronics Conference, IVNC 2012
Country/Territory	Korea, Republic of
City	Jeju
Period	12/7/9 → 12/7/13

Keywords

Field emission
MEMS
Metal grid

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2012.6316932

Cite this

Kim, J., Kim, J. I., Kim, G. J., Heo, D., Jeon, S. G., Shin, D. H., Sun, Y., & Lee, C. J. (2012). Silicon based micro-scale metal grid for field emission device. In Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om (pp. 278-279). [6316932] (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012). https://doi.org/10.1109/IVNC.2012.6316932

Silicon based micro-scale metal grid for field emission device. / Kim, Jaehong; Kim, Jung Il; Kim, Geun Ju et al.
Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om. 2012. p. 278-279 6316932 (Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, J, Kim, JI, Kim, GJ, Heo, D, Jeon, SG, Shin, DH, Sun, Y & Lee, CJ 2012, Silicon based micro-scale metal grid for field emission device. in Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om., 6316932, Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012, pp. 278-279, 25th International Vacuum Nanoelectronics Conference, IVNC 2012, Jeju, Korea, Republic of, 12/7/9. https://doi.org/10.1109/IVNC.2012.6316932

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title = "Silicon based micro-scale metal grid for field emission device",

abstract = "For application to electron field emission devices, a metal grid based on a silicon frame is introduced. Silicon frame is used to improve the thermal resistivity and electrical stability by electron beam. Silicon based micro-scale metal grid fabricated using MEMS technology.",

keywords = "Field emission, MEMS, Metal grid",

author = "Jaehong Kim and Kim, {Jung Il} and Kim, {Geun Ju} and Duchang Heo and Jeon, {Seok Gy} and Shin, {Dong Hoon} and Yuning Sun and Lee, {Cheol Jin}",

year = "2012",

doi = "10.1109/IVNC.2012.6316932",

language = "English",

isbn = "9781467319812",

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AU - Shin, Dong Hoon

AU - Sun, Yuning

AU - Lee, Cheol Jin

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AB - For application to electron field emission devices, a metal grid based on a silicon frame is introduced. Silicon frame is used to improve the thermal resistivity and electrical stability by electron beam. Silicon based micro-scale metal grid fabricated using MEMS technology.

KW - Field emission

KW - MEMS

KW - Metal grid

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BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012Om

T2 - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Y2 - 9 July 2012 through 13 July 2012

ER -

Silicon based micro-scale metal grid for field emission device

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

Access to Document

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