Silicon-Hydrogen Bonding Configuration Modified by Layer Stacking Sequence in Silicon Heterojunction Solar Cells

Recent improvements in highly efficient crystalline silicon (c-Si) solar cells have relied on surface passivation. Hydrogen plays a crucial role in the surface passivation of silicon heterojunction (SHJ) solar cells because Si-H bonds passivate dangling bonds in amorphous silicon and on the c-Si surface. In this work, we demonstrate that the Si-H bonding configuration is modified by layer stacking sequence for SHJs. The quality of surface passivation strongly correlates with low-temperature hydrogen effusion from the SHJ structure. Our results show that the deposition of doped layers on intrinsic amorphous silicon supplies additional hydrogen to the amorphous/crystalline heterostructure. Moreover, the deposition of a p-layer modifies the microstructure of the intrinsic layer underneath, whereas depositing an n-layer does not induce structural changes. We suggest that the low-temperature hydrogen effusion characteristics can be used as a sensitive indicator for examining the passivation quality of SHJ solar cells.