Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)2586-2591
Number of pages6
JournalNano Research
Issue number5
Publication statusPublished - 2018 May 1

Bibliographical note

Funding Information:
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2013R1-A2A1A03070750 and NRF-2015R1A2A1A15055437), by the Brain Korea 21 Plus Project in 2017, and Samsung Electronics.

Publisher Copyright:
© 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.


  • bendable substrate
  • n-MOS inverter
  • p-MOS inverter
  • ratioed inverter
  • silicon nanowire

ASJC Scopus subject areas

  • General Materials Science
  • Electrical and Electronic Engineering


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