Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon; Yoonjoong Kim; Doohyeok Lim; Kyeungmin Im; Sangsig Kim

doi:10.1007/s12274-017-1884-9

Silicon nanowire ratioed inverters on bendable substrates

Jeongje Moon, Yoonjoong Kim, Doohyeok Lim, Kyeungmin Im, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	2586-2591
Number of pages	6
Journal	Nano Research
Volume	11
Issue number	5
DOIs	https://doi.org/10.1007/s12274-017-1884-9
Publication status	Published - 2018 May 1

Bibliographical note

Funding Information:
This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2013R1-A2A1A03070750 and NRF-2015R1A2A1A15055437), by the Brain Korea 21 Plus Project in 2017, and Samsung Electronics.

Publisher Copyright:
© 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

Keywords

bendable substrate
n-MOS inverter
p-MOS inverter
ratioed inverter
silicon nanowire

ASJC Scopus subject areas

General Materials Science
Electrical and Electronic Engineering

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10.1007/s12274-017-1884-9

Cite this

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title = "Silicon nanowire ratioed inverters on bendable substrates",

abstract = "In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].",

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author = "Jeongje Moon and Yoonjoong Kim and Doohyeok Lim and Kyeungmin Im and Sangsig Kim",

note = "Funding Information: This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2013R1-A2A1A03070750 and NRF-2015R1A2A1A15055437), by the Brain Korea 21 Plus Project in 2017, and Samsung Electronics. Publisher Copyright: {\textcopyright} 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

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AU - Kim, Yoonjoong

AU - Lim, Doohyeok

AU - Im, Kyeungmin

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (Nos. NRF-2013R1-A2A1A03070750 and NRF-2015R1A2A1A15055437), by the Brain Korea 21 Plus Project in 2017, and Samsung Electronics. Publisher Copyright: © 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

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N2 - In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].

AB - In this study, we demonstrate the performance of silicon nanowire (SiNW)n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricateddevices can be controlled by adjusting the load voltage. The logic swings of then- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with goodfatigue properties. Our bendable SiNW ratioed inverters show promise asa candidate building block for future bendable electronics. [Figure not available: see fulltext.].

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Silicon nanowire ratioed inverters on bendable substrates

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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