Silicon on insulator (SOI) wafer development using Plasma Source Ion Implantation (PSSI) technology

Seung Jin Jung; Sung Bae Lee; Seung Hee Han; Sang Ho Lim

Silicon on insulator (SOI) wafer development using Plasma Source Ion Implantation (PSSI) technology

Seung Jin Jung, Sung Bae Lee, Seung Hee Han, Sang Ho Lim

Research output: Contribution to journal › Article › peer-review

Abstract

PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 × 10¹⁷ atoms/cm² implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000Å Si₃N₄ by PECVD. Cross-sectional TEM showed did continuous 500Å thick buried oxide layer was formed with 300Å thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

Original language	English
Pages (from-to)	39-43
Number of pages	5
Journal	Journal of Korean Institute of Metals and Materials
Volume	46
Issue number	1
Publication status	Published - 2008 Jan

Keywords

Buried oxide
PSII
SPIMOX
Silicon on insulator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Modelling and Simulation
Surfaces, Coatings and Films
Metals and Alloys

Cite this

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title = "Silicon on insulator (SOI) wafer development using Plasma Source Ion Implantation (PSSI) technology",

abstract = "PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 × 1017 atoms/cm2 implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000{\AA} Si3N4 by PECVD. Cross-sectional TEM showed did continuous 500{\AA} thick buried oxide layer was formed with 300{\AA} thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.",

keywords = "Buried oxide, PSII, SPIMOX, Silicon on insulator",

author = "Jung, {Seung Jin} and Lee, {Sung Bae} and Han, {Seung Hee} and Lim, {Sang Ho}",

year = "2008",

month = jan,

language = "English",

volume = "46",

pages = "39--43",

journal = "Journal of Korean Institute of Metals and Materials",

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AU - Jung, Seung Jin

AU - Lee, Sung Bae

AU - Han, Seung Hee

AU - Lim, Sang Ho

PY - 2008/1

Y1 - 2008/1

N2 - PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 × 1017 atoms/cm2 implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000Å Si3N4 by PECVD. Cross-sectional TEM showed did continuous 500Å thick buried oxide layer was formed with 300Å thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

AB - PSII (Plasma Source Ion Implantation) using high density pulsed ICP source was employed to implant oxygen ions in Si wafer. The PSII technique can achieve a nominal oxygen dose of 3 × 1017 atoms/cm2 implantation time of about 20min. In order to prevent oxidation of SOI layer during high temperature annealing, the wafer was capped with 2,000Å Si3N4 by PECVD. Cross-sectional TEM showed did continuous 500Å thick buried oxide layer was formed with 300Å thick top silicon layer in the sample. This study showed the possibility of SOI fabrication using the plasma source ion implantation with pulsed ICP source.

KW - Buried oxide

KW - PSII

KW - SPIMOX

KW - Silicon on insulator

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JO - Journal of Korean Institute of Metals and Materials

JF - Journal of Korean Institute of Metals and Materials

IS - 1

ER -

Silicon on insulator (SOI) wafer development using Plasma Source Ion Implantation (PSSI) technology

Abstract

Keywords

ASJC Scopus subject areas

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