We successfully fabricated microgated nanotubes emitter using nanotubes directly grown on the substrate by the thermal CVD method. In order to reduce the leakage current due to flowing current along nanotubes grown on the sidewalls of the gate hole, we suggested the very simple processing step for fabricating sidewall protector using a parting layer that is generally used in metal tip process. The field emission properties imply a turn-on gate voltage of 52 V and an emission current of 1.7 μA at 100 V. The sidewall protector has an effect on reducing gate current by suppressing the growth of nanotubes on sidewall. The emission current fluctuation was ± 10% over 2600 s.
Bibliographical noteFunding Information:
This work was partially supported by the Information Technology Research Center Program of Ministry of Information and Communication in Korea and by the Intelligent Microsystem Center, which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science & Technology (MS-01-325-01).
- Carbon nanotube
- Field emission
- Selective growth
- Triode emitter
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering