Simple approach to fabricate microgated nanotubes emitter with a sidewall protector

Yoon Taek Jang, Chang Hoon Choi, Byeong Kwon Ju, Jin Ho Ahn, Yun Hi Lee

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We successfully fabricated microgated nanotubes emitter using nanotubes directly grown on the substrate by the thermal CVD method. In order to reduce the leakage current due to flowing current along nanotubes grown on the sidewalls of the gate hole, we suggested the very simple processing step for fabricating sidewall protector using a parting layer that is generally used in metal tip process. The field emission properties imply a turn-on gate voltage of 52 V and an emission current of 1.7 μA at 100 V. The sidewall protector has an effect on reducing gate current by suppressing the growth of nanotubes on sidewall. The emission current fluctuation was ± 10% over 2600 s.

Original languageEnglish
Pages (from-to)9-12
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-2
Publication statusPublished - 2003
Externally publishedYes

Bibliographical note

Funding Information:
This work was partially supported by the Information Technology Research Center Program of Ministry of Information and Communication in Korea and by the Intelligent Microsystem Center, which carries out one of the 21st century's Frontier R&D Projects sponsored by the Korea Ministry of Science & Technology (MS-01-325-01).


  • Carbon nanotube
  • Field emission
  • Selective growth
  • Triode emitter

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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