Abstract
In this paper, a novel technique for the assembly of single-walled carbon nanotubes (SWCNTs), and which was demonstrated using only a photolithographic process without additional chemical steps, is proposed. In this new process, unlike the conventional self-assembled process using octadecyltrichlorosilane (OTS), the SWCNTs could be selectively absorbed on a SiO2/Si substrate. First of all, the selectively assembled channels of the SWCNTs were fabricated on the SiO2 surface for a field effect transistor (FET). We finally fabricated SWCNT-based FETs by using our proposed technique. This technique will provide a useful basis for the implementation of various FET devices with SWCNT channels.
Original language | English |
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Pages (from-to) | 1380-1383 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 58 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2011 May 13 |
Keywords
- FET
- Photolithography
- SAM
- SWCNT
ASJC Scopus subject areas
- Physics and Astronomy(all)