A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.
|Title of host publication||2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2019 Apr|
|Event||2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France|
Duration: 2019 Apr 1 → 2019 Apr 3
|Name||2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019|
|Conference||2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019|
|Period||19/4/1 → 19/4/3|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.
© 2019 IEEE.
- channel doping concentration
- derivative of transconductance
- extraction method
- highly doped channel
- peak separation
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials