Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

So Jeong Park, Dae Young Jeon, Gyu Tae Kim

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.

    Original languageEnglish
    Title of host publication2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781728116587
    DOIs
    Publication statusPublished - 2019 Apr
    Event2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France
    Duration: 2019 Apr 12019 Apr 3

    Publication series

    Name2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

    Conference

    Conference2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
    Country/TerritoryFrance
    CityGrenoble
    Period19/4/119/4/3

    Bibliographical note

    Funding Information:
    ACKNOWLEDGMENT This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.

    Publisher Copyright:
    © 2019 IEEE.

    Keywords

    • channel doping concentration
    • derivative of transconductance
    • extraction method
    • highly doped channel
    • peak separation

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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