Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

So Jeong Park; Dae Young Jeon; Gyu Tae Kim

doi:10.1109/EUROSOI-ULIS45800.2019.9041898

Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

So Jeong Park, Dae Young Jeon, Gyu Tae Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new method to estimate the channel doping concentration (N_d) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (V_th) and the flat band voltage (V_fb) extracted from simulation results linearly increases as a function of N_d (N_d = 1×10¹⁸/cm³) and the range of N_d for proposed method varied with Si thickness because it depends on the maximum depletion width at given N_d. The nanowire channel has wider range of N_d, compared to the planar channel, due to the reinforced gate control by sidewall gates.

Original language	English
Title of host publication	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728116587
DOIs	https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898
Publication status	Published - 2019 Apr
Event	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 - Grenoble, France Duration: 2019 Apr 1 → 2019 Apr 3

Publication series

Name	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Conference

Conference	2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
Country/Territory	France
City	Grenoble
Period	19/4/1 → 19/4/3

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant.

Publisher Copyright:
© 2019 IEEE.

Keywords

channel doping concentration
derivative of transconductance
extraction method
highly doped channel
peak separation

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EUROSOI-ULIS45800.2019.9041898

Cite this

Park, S. J., Jeon, D. Y., & Kim, G. T. (2019). Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 Article 9041898 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898

Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. / Park, So Jeong; Jeon, Dae Young; Kim, Gyu Tae.
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 9041898 (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, SJ, Jeon, DY & Kim, GT 2019, Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. in 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019., 9041898, 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Institute of Electrical and Electronics Engineers Inc., 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019, Grenoble, France, 19/4/1. https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041898

Park SJ, Jeon DY, Kim GT. Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. In 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 9041898. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019). doi: 10.1109/EUROSOI-ULIS45800.2019.9041898

Park, So Jeong ; Jeon, Dae Young ; Kim, Gyu Tae. / Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices. 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019).

@inproceedings{3e5459fcc84a47eeb7a0334c496df0f9,

title = "Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices",

abstract = "A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.",

keywords = "channel doping concentration, derivative of transconductance, extraction method, highly doped channel, peak separation",

author = "Park, {So Jeong} and Jeon, {Dae Young} and Kim, {Gyu Tae}",

note = "Funding Information: ACKNOWLEDGMENT This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019 ; Conference date: 01-04-2019 Through 03-04-2019",

year = "2019",

month = apr,

doi = "10.1109/EUROSOI-ULIS45800.2019.9041898",

language = "English",

series = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019",

}

TY - GEN

T1 - Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

AU - Park, So Jeong

AU - Jeon, Dae Young

AU - Kim, Gyu Tae

N1 - Funding Information: ACKNOWLEDGMENT This work was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2016R1A6A3A11933511, NRF-2017M3A7B4049167), the Future Semiconductor Device Technology Development Program (10067739) funded by Ministry of Trade, Industry & Energy (MOTIE), Korea Semiconductor Research Consortium (KSRC), the Korea Institute of Science and Technology (KIST) Institutional Program and a Korea University Grant. Publisher Copyright: © 2019 IEEE.

PY - 2019/4

Y1 - 2019/4

N2 - A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.

AB - A new method to estimate the channel doping concentration (Nd) in highly doped fully-depleted SOI MOSFETs is proposed with simulation results based on the electron charge in partially depleted regime derived from Gauss's law. The separation between the threshold voltage (Vth) and the flat band voltage (Vfb) extracted from simulation results linearly increases as a function of Nd (Nd = 1×1018/cm3) and the range of Nd for proposed method varied with Si thickness because it depends on the maximum depletion width at given Nd. The nanowire channel has wider range of Nd, compared to the planar channel, due to the reinforced gate control by sidewall gates.

KW - channel doping concentration

KW - derivative of transconductance

KW - extraction method

KW - highly doped channel

KW - peak separation

UR - http://www.scopus.com/inward/record.url?scp=85083255068&partnerID=8YFLogxK

U2 - 10.1109/EUROSOI-ULIS45800.2019.9041898

DO - 10.1109/EUROSOI-ULIS45800.2019.9041898

M3 - Conference contribution

AN - SCOPUS:85083255068

T3 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

BT - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019

Y2 - 1 April 2019 through 3 April 2019

ER -

Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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