Abstract
A simple convenient way of forming a selective patterning on a single nanowire was demonstrated by using a conventional optical microscope. The fine resolution could reach approximately 5 μ m, which is enough to define electrode patterns on a single nanowire in a two-probe configuration. The photolithographic processes were carried out under the microscope with photoresist-coated substrate deposited by nanowires. Through the image capture and a proper configuration of the various home-made photomasks could produce a selective patterning on an individual nanowire successfully. Current-voltage characteristics of an individual GaN single nanowire were measured as a demonstration.
Original language | English |
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Article number | 166 |
Pages (from-to) | 1500-1507 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5754 |
Issue number | PART 3 |
DOIs | |
Publication status | Published - 2005 |
Event | Optical Microlithography XVIII - San Jose, CA, United States Duration: 2005 Mar 1 → 2005 Mar 4 |
Keywords
- Nanowire
- Optical microscope
- Photo lithography
- Selective patterning
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering