Simulating device size effects on magnetization pinning mechanisms in spin valves

J. O. Oti; R. W. Cross; S. E. Russek; Y. K. Kim

doi:10.1063/1.362692

Simulating device size effects on magnetization pinning mechanisms in spin valves

J. O. Oti, R. W. Cross, S. E. Russek, Y. K. Kim

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effects of magnetostatic interactions on the giant magnetoresistive (GMR) response of NiFe/ Cu/NiFe spin valves are studied using an analytical model. The model is applicable to devices small enough for the magnetic layers to exhibit single-domain behavior. Devices having lengths in the track-width direction of 10 μm and interlayer separations of 4.5 nm are studied. Stripe heights are varied from 0.5 to 2 μm. The magnetization of one magnetic layer is pinned by a transverse pinning field that is varied from 0 to 24 kA/m (300 Oe). GMR curves for transverse fields are calculated. At zero external field the magnetization of the layers shows a tendency to align themselves antiparallel in the transverse direction. This results in an offset from the ideal biasing of the device. Broadening of the curves due to shape anisotropy occurs with decreasing stripe height and increasing magnetic layer thickness, and the magnetization in the pinned layer becomes less stable.

Original language	English
Pages (from-to)	6386-6388
Number of pages	3
Journal	Journal of Applied Physics
Volume	79
Issue number	8 PART 2B
DOIs	https://doi.org/10.1063/1.362692
Publication status	Published - 1996 Apr 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The effects of magnetostatic interactions on the giant magnetoresistive (GMR) response of NiFe/ Cu/NiFe spin valves are studied using an analytical model. The model is applicable to devices small enough for the magnetic layers to exhibit single-domain behavior. Devices having lengths in the track-width direction of 10 μm and interlayer separations of 4.5 nm are studied. Stripe heights are varied from 0.5 to 2 μm. The magnetization of one magnetic layer is pinned by a transverse pinning field that is varied from 0 to 24 kA/m (300 Oe). GMR curves for transverse fields are calculated. At zero external field the magnetization of the layers shows a tendency to align themselves antiparallel in the transverse direction. This results in an offset from the ideal biasing of the device. Broadening of the curves due to shape anisotropy occurs with decreasing stripe height and increasing magnetic layer thickness, and the magnetization in the pinned layer becomes less stable.",

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AU - Oti, J. O.

AU - Cross, R. W.

AU - Russek, S. E.

AU - Kim, Y. K.

PY - 1996/4/15

Y1 - 1996/4/15

N2 - The effects of magnetostatic interactions on the giant magnetoresistive (GMR) response of NiFe/ Cu/NiFe spin valves are studied using an analytical model. The model is applicable to devices small enough for the magnetic layers to exhibit single-domain behavior. Devices having lengths in the track-width direction of 10 μm and interlayer separations of 4.5 nm are studied. Stripe heights are varied from 0.5 to 2 μm. The magnetization of one magnetic layer is pinned by a transverse pinning field that is varied from 0 to 24 kA/m (300 Oe). GMR curves for transverse fields are calculated. At zero external field the magnetization of the layers shows a tendency to align themselves antiparallel in the transverse direction. This results in an offset from the ideal biasing of the device. Broadening of the curves due to shape anisotropy occurs with decreasing stripe height and increasing magnetic layer thickness, and the magnetization in the pinned layer becomes less stable.

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Simulating device size effects on magnetization pinning mechanisms in spin valves

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