Simulation and characterization of a dual-type 3-dimensional silicon detector

Jihoon Choi; Kyungmin Lee; Eunil Won

doi:10.3938/jkps.60.1862

Simulation and characterization of a dual-type 3-dimensional silicon detector

Jihoon Choi, Kyungmin Lee, Eunil Won

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.

Original language	English
Pages (from-to)	1862-1867
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	11
DOIs	https://doi.org/10.3938/jkps.60.1862
Publication status	Published - 2012 Jun

Keywords

3D detector
Radiation hardness
Silicon detector

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.60.1862

Cite this

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title = "Simulation and characterization of a dual-type 3-dimensional silicon detector",

abstract = "A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.",

keywords = "3D detector, Radiation hardness, Silicon detector",

author = "Jihoon Choi and Kyungmin Lee and Eunil Won",

note = "Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government (No. 2011-0002891). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

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doi = "10.3938/jkps.60.1862",

language = "English",

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AU - Choi, Jihoon

AU - Lee, Kyungmin

AU - Won, Eunil

N1 - Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government (No. 2011-0002891). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/6

Y1 - 2012/6

N2 - A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.

AB - A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.

KW - 3D detector

KW - Radiation hardness

KW - Silicon detector

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Simulation and characterization of a dual-type 3-dimensional silicon detector

Abstract

Keywords

ASJC Scopus subject areas

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