Simulation and characterization of a dual-type 3-dimensional silicon detector

Jihoon Choi; Kyungmin Lee; Eunil Won

doi:10.3938/jkps.60.1862

Simulation and characterization of a dual-type 3-dimensional silicon detector

Jihoon Choi, Kyungmin Lee, Eunil Won

Research output: Contribution to journal › Article › peer-review

Abstract

A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.

Original language	English
Pages (from-to)	1862-1867
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	60
Issue number	11
DOIs	https://doi.org/10.3938/jkps.60.1862
Publication status	Published - 2012 Jun

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea grant funded by the Korea government (No. 2011-0002891).

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

Keywords

3D detector
Radiation hardness
Silicon detector

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.60.1862

Cite this

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abstract = "A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.",

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note = "Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government (No. 2011-0002891). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

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N1 - Funding Information: This work was supported by the National Research Foundation of Korea grant funded by the Korea government (No. 2011-0002891). Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

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Simulation and characterization of a dual-type 3-dimensional silicon detector

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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