Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers

S. Nigam; Jihyun Kim; B. Luo; F. Ren; G. Y. Chung; M. F. MacMillan; J. R. Williams; S. J. Pearton

doi:10.1149/1.1522387

Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers

S. Nigam, Jihyun Kim, B. Luo, F. Ren, G. Y. Chung, M. F. MacMillan, J. R. Williams, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

Abstract

The dc performance of SiO₂ dielectric overlap-terminated 4H-SiC Schottky rectifiers was simulated for different drift layer doping levels and dielectric thicknesses. The devices were then fabricated with different Schottky contact diameters and the dc results compared to the simulations. There was a strong dependence of reverse breakdown voltage on contact diameter (φ) ranging from -750 V for 100 μm φ to -440 V for 1000 μm. The reverse leakage current scaled with diode diameter, indicating that the surface contributions are dominant. The specific on-state resistance was ∼0.8 mΩ cm², close to the theoretical minimum, with a forward turn-on voltage of 2.14 V at 100 A cm^-2. The rectifiers were tested to maximum forward currents of 2 A. The contact resistivity of back-side Ni contacts annealed at 970°C was ∼1.2 × 10^-6 Ω cm². The yield of diodes with breakdown >750 V was >50% over a quarter of a 2 in. diam wafer.

Original language	English
Pages (from-to)	G1-G5
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	1
DOIs	https://doi.org/10.1149/1.1522387
Publication status	Published - 2003 Jan
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1522387

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title = "Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers",

abstract = "The dc performance of SiO2 dielectric overlap-terminated 4H-SiC Schottky rectifiers was simulated for different drift layer doping levels and dielectric thicknesses. The devices were then fabricated with different Schottky contact diameters and the dc results compared to the simulations. There was a strong dependence of reverse breakdown voltage on contact diameter (φ) ranging from -750 V for 100 μm φ to -440 V for 1000 μm. The reverse leakage current scaled with diode diameter, indicating that the surface contributions are dominant. The specific on-state resistance was ∼0.8 mΩ cm2, close to the theoretical minimum, with a forward turn-on voltage of 2.14 V at 100 A cm-2. The rectifiers were tested to maximum forward currents of 2 A. The contact resistivity of back-side Ni contacts annealed at 970°C was ∼1.2 × 10-6 Ω cm2. The yield of diodes with breakdown >750 V was >50% over a quarter of a 2 in. diam wafer.",

author = "S. Nigam and Jihyun Kim and B. Luo and F. Ren and Chung, {G. Y.} and MacMillan, {M. F.} and Williams, {J. R.} and Pearton, {S. J.}",

year = "2003",

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volume = "150",

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TY - JOUR

T1 - Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers

AU - Nigam, S.

AU - Kim, Jihyun

AU - Luo, B.

AU - Ren, F.

AU - Chung, G. Y.

AU - MacMillan, M. F.

AU - Williams, J. R.

AU - Pearton, S. J.

PY - 2003/1

Y1 - 2003/1

N2 - The dc performance of SiO2 dielectric overlap-terminated 4H-SiC Schottky rectifiers was simulated for different drift layer doping levels and dielectric thicknesses. The devices were then fabricated with different Schottky contact diameters and the dc results compared to the simulations. There was a strong dependence of reverse breakdown voltage on contact diameter (φ) ranging from -750 V for 100 μm φ to -440 V for 1000 μm. The reverse leakage current scaled with diode diameter, indicating that the surface contributions are dominant. The specific on-state resistance was ∼0.8 mΩ cm2, close to the theoretical minimum, with a forward turn-on voltage of 2.14 V at 100 A cm-2. The rectifiers were tested to maximum forward currents of 2 A. The contact resistivity of back-side Ni contacts annealed at 970°C was ∼1.2 × 10-6 Ω cm2. The yield of diodes with breakdown >750 V was >50% over a quarter of a 2 in. diam wafer.

AB - The dc performance of SiO2 dielectric overlap-terminated 4H-SiC Schottky rectifiers was simulated for different drift layer doping levels and dielectric thicknesses. The devices were then fabricated with different Schottky contact diameters and the dc results compared to the simulations. There was a strong dependence of reverse breakdown voltage on contact diameter (φ) ranging from -750 V for 100 μm φ to -440 V for 1000 μm. The reverse leakage current scaled with diode diameter, indicating that the surface contributions are dominant. The specific on-state resistance was ∼0.8 mΩ cm2, close to the theoretical minimum, with a forward turn-on voltage of 2.14 V at 100 A cm-2. The rectifiers were tested to maximum forward currents of 2 A. The contact resistivity of back-side Ni contacts annealed at 970°C was ∼1.2 × 10-6 Ω cm2. The yield of diodes with breakdown >750 V was >50% over a quarter of a 2 in. diam wafer.

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DO - 10.1149/1.1522387

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SN - 0013-4651

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SP - G1-G5

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 1

ER -

Simulation and experimental characteristics of 4H-SiC Schottky power rectifiers

Abstract

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UN SDGs

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