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Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
T. S. Kang, X. T. Wang, C. F. Lo, F. Ren, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, Jihyun Kim
Research output: Contribution to journal › Article › peer-review
11
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(Scopus)