Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors
- T. S. Kang
- , X. T. Wang
- , C. F. Lo
- , F. Ren*
- , S. J. Pearton
- , O. Laboutin
- , Yu Cao
- , J. W. Johnson
- , Jihyun Kim
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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