Abstract
This paper reports the initial results and experimental approach method on three-dimensional simulation and modeling of electron beam lithography in the 0.2 μm line and space patterns. We studied the electron scattering distribution in the resist, the energy distribution of patterns and the development mechanism for profile formation. The simplified string model of three-dimensions is used to remove the pattern exposed by direct writing. Development rate is experimentally decided as the dependency of dose, development time, and resist characteristics in the solvents to delineate 0.2μm/0.3μm line and space patterns for negative and positive resist. As a result, we obtained the optimum resist profile of 0.2μm line and space patterns with various forms as the variance of exposure energy and develop time. Also we can see the proximity effects in generating pattern. This results agree with actual process for deep sub-micron patterns.
| Original language | English |
|---|---|
| Pages (from-to) | 159-168 |
| Number of pages | 10 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 2723 |
| DOIs | |
| Publication status | Published - 1996 |
| Externally published | Yes |
| Event | Electron-Beam, X-Ray, EUV and Ion-Beam Submicrometer Lithographies for Manufacturing VI - Santa Clara, CA, United States Duration: 1996 Mar 11 → 1996 Mar 13 |
Keywords
- Development
- Electron beam lithography
- Exposure
- Pattern
- Profile
- Resist
- Sub-micron
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering