Simulation methodology for 2D random network of CNTs field-effect transistors

Min Kyu Joo; Mireille Mouis; Gyu Tae Kim; Un Jeong Kim; Gerard Ghibaudo

doi:10.1109/ULIS.2013.6523518

Simulation methodology for 2D random network of CNTs field-effect transistors

Min Kyu Joo, Mireille Mouis, Gyu Tae Kim, Un Jeong Kim, Gerard Ghibaudo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (l_d) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (R_sd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.

Original language	English
Title of host publication	ULIS 2013
Subtitle of host publication	The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'
Pages	197-200
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2013.6523518
Publication status	Published - 2013
Event	14th International Conference on Ultimate Integration on Silicon, ULIS 2013 - Coventry, United Kingdom Duration: 2013 Mar 19 → 2013 Mar 21

Publication series

Name	ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'

Other

Other	14th International Conference on Ultimate Integration on Silicon, ULIS 2013
Country/Territory	United Kingdom
City	Coventry
Period	13/3/19 → 13/3/21

Keywords

Carbon nanotube (CNT)
SPICE simulation
percolation theory
sensor applications

ASJC Scopus subject areas

Hardware and Architecture

Access to Document

10.1109/ULIS.2013.6523518

Cite this

Joo, M. K., Mouis, M., Kim, G. T., Kim, U. J., & Ghibaudo, G. (2013). Simulation methodology for 2D random network of CNTs field-effect transistors. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day' (pp. 197-200). Article 6523518 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'). https://doi.org/10.1109/ULIS.2013.6523518

Simulation methodology for 2D random network of CNTs field-effect transistors. / Joo, Min Kyu; Mouis, Mireille; Kim, Gyu Tae et al.
ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 197-200 6523518 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joo, MK, Mouis, M, Kim, GT, Kim, UJ & Ghibaudo, G 2013, Simulation methodology for 2D random network of CNTs field-effect transistors. in ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'., 6523518, ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day', pp. 197-200, 14th International Conference on Ultimate Integration on Silicon, ULIS 2013, Coventry, United Kingdom, 13/3/19. https://doi.org/10.1109/ULIS.2013.6523518

Joo MK, Mouis M, Kim GT, Kim UJ, Ghibaudo G. Simulation methodology for 2D random network of CNTs field-effect transistors. In ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. p. 197-200. 6523518. (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'). doi: 10.1109/ULIS.2013.6523518

Joo, Min Kyu ; Mouis, Mireille ; Kim, Gyu Tae et al. / Simulation methodology for 2D random network of CNTs field-effect transistors. ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day'. 2013. pp. 197-200 (ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day').

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abstract = "Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (ld) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (Rsd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.",

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AB - Two-dimensional (2D) random networks of carbon nanotubes (RN-CNTs) were simulated with respect to various geometry factors and compared with experimental results. To determine the effective current-conducting pathway(s) in such complex RN-CNTs, we developed a methodology to find the optimal percolation paths with account for the conduction length (ld) of each CNT segment involved, for properties of the junction between CNTs and for series resistance (Rsd) at contacts. Moreover, to investigate linear and non-linear operation of RN-CNT FETs, SPICE circuit simulation was employed.

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Simulation methodology for 2D random network of CNTs field-effect transistors

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Keywords

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