Simulation of a lateral trench IGBT with p+ diverter having superior electrical characteristics

Goo Kang Ey Goo Kang, Hyun Moon Seung Hyun Moon, S. Kim, Young Sung Man Young Sung

Research output: Contribution to conferencePaperpeer-review


A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punch-through was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't related to breakdown voltage in a different way conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.

Original languageEnglish
Number of pages4
Publication statusPublished - 2001
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: 2001 Jun 302001 Jun 30


Other2001 IEEE Hong Kong Electron Devices Meeting
CityHong Kong


  • Forward blocking voltage
  • Latch-up
  • p+ diverter
  • Power integrated circuits
  • Power transistor

ASJC Scopus subject areas

  • General Engineering


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