Abstract
A new Lateral Trench Insulated Gate Bipolar Transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between anode electrode region and cathode electrode. Generally, if the LTIGBT had p+ divert region, forward blocking voltage was decreased, greatly because n-drift layer corresponding to punch-through was decreased. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. The forward blocking voltage of LTIGBT with p+ diverter increased 1.3 times more than those of the conventional LTIGBT. Because the p+ diverter region of the proposed device was enclosed trench oxide layer, the electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter was occurred, lately. Therefore, the p+ diverter of the proposed LTIGBT didn't related to breakdown voltage in a different way conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540A/cm2, and 1453A/cm2, respectively. The enhanced latch-up capability of the LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and p+ cathode layer beneath n+ cathode layer.
| Original language | English |
|---|---|
| Pages | 50-53 |
| Number of pages | 4 |
| Publication status | Published - 2001 |
| Event | 2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China Duration: 2001 Jun 30 → 2001 Jun 30 |
Other
| Other | 2001 IEEE Hong Kong Electron Devices Meeting |
|---|---|
| Country/Territory | China |
| City | Hong Kong |
| Period | 01/6/30 → 01/6/30 |
Keywords
- Forward blocking voltage
- Latch-up
- Power integrated circuits
- Power transistor
- p+ diverter
ASJC Scopus subject areas
- General Engineering