Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics

Ey Goo Kang, Sangsig Kim, Man Young Sung

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A new lateral trench insulated gate bipolar transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between the anode electrode and the cathode electrode. Generally, as the conventional LTIGBT had a p+ divert region, the forward blocking voltage was decreased greatly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was an enclosed trench oxide layer, the electric field moved toward the trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter occurred. Therefore, the p+ diverter of the proposed LTIGBT did not relate to breakdown voltage in a way different to the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and the p+ cathode layer beneath the n+ cathode layer.

Original languageEnglish
Pages (from-to)749-753
Number of pages5
JournalMicroelectronics Journal
Issue number9
Publication statusPublished - 2001 Sept


  • Forward blocking voltage
  • Latch-up
  • Power integrated circuit
  • Turn-off
  • p+ Divert structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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