Simulation studies of a pixel-type 3-D silicon sensor

Suyong Choi; Jungwhan Goh; Kyungho Ha; Jiwoong Seo; Intae Yu

doi:10.3938/jkps.58.1101

Simulation studies of a pixel-type 3-D silicon sensor

Suyong Choi, Jungwhan Goh, Kyungho Ha, Jiwoong Seo, Intae Yu

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.

Original language	English
Pages (from-to)	1101-1104
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	58
Issue number	5
DOIs	https://doi.org/10.3938/jkps.58.1101
Publication status	Published - 2011 May 13

Keywords

3-D structures
Silicon sensor
Simulation

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.3938/jkps.58.1101

Cite this

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title = "Simulation studies of a pixel-type 3-D silicon sensor",

abstract = "Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.",

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AU - Choi, Suyong

AU - Goh, Jungwhan

AU - Ha, Kyungho

AU - Seo, Jiwoong

AU - Yu, Intae

PY - 2011/5/13

Y1 - 2011/5/13

N2 - Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.

AB - Silicon sensors with 3-D structures are expected to tolerate radiation levels higher than those of sensors based on normal planar technologies. We studied the performance of a single-sided 3-D silicon pixel-type sensor by using 3-D semiconductor simulation tools. We expect the 3-D silicon detector to have good charge collection efficiency and position resolution.

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KW - Silicon sensor

KW - Simulation

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DO - 10.3938/jkps.58.1101

M3 - Article

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JO - Journal of the Korean Physical Society

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Simulation studies of a pixel-type 3-D silicon sensor

Abstract

Keywords

ASJC Scopus subject areas

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