Simulator acceleration and inverse design of fin field-effect transistors using machine learning

Insoo Kim, So Jeong Park, Changwook Jeong, Munbo Shim, Dae Sin Kim, Gyu Tae Kim, Junhee Seok

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The simulation and design of electronic devices such as transistors is vital for the semiconductor industry. Conventionally, a device is intuitively designed and simulated using model equations, which is a time-consuming and expensive process. However, recent machine learning approaches provide an unprecedented opportunity to improve these tasks by training the underlying relationships between the device design and the specifications derived from the extensively accumulated simulation data. This study implements various machine learning approaches for the simulation acceleration and inverse-design problems of fin field-effect transistors. In comparison to traditional simulators, the proposed neural network model demonstrated almost equivalent results (R2 = 0.99) and was more than 122,000 times faster in simulation. Moreover, the proposed inverse-design model successfully generated design parameters that satisfied the desired target specifications with high accuracies (R2 = 0.96). Overall, the results demonstrated that the proposed machine learning models aided in achieving efficient solutions for the simulation and design problems pertaining to electronic devices. Thus, the proposed approach can be further extended to more complex devices and other vital processes in the semiconductor industry.

Original languageEnglish
Article number1140
JournalScientific reports
Issue number1
Publication statusPublished - 2022 Dec

Bibliographical note

Funding Information:
This work was supported by Samsung Electronics Co., Ltd (IO201214-08149-01) as well as a grant from the National Research Foundation of Korea (NRF-2019R1A2C1084778).

Publisher Copyright:
© 2022, The Author(s).

ASJC Scopus subject areas

  • General


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