Abstract
The authors developed an experimental method that can measure the in-plane thermal conductivity of a thin film and the interface thermal conductance between the film and the metal strip, simultaneously. This technique, the in-plane 3ω method, can be applied to the films with very high thermal conductivity such as diamond films. To guarantee the reliability of the measurement, the factors causing error were analyzed rigorously. Then, the method was demonstrated on silicon dioxide and silicon nitride films and was valid in experiments performed in the open atmosphere. They also applied the method on several chemical vapor deposited diamond films of different thicknesses and pretreatment methods. The data are comparable with those from previous researches.
| Original language | English |
|---|---|
| Pages (from-to) | 2408-2412 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 27 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2009 |
Bibliographical note
Funding Information:This work was supported by the Micro Thermal System Research Center sponsored by the Korean Science and Engineering Foundation and Grant No. R01-2006-000-11060-0 from the Basic Research Program of the Korea Science and Engineering Foundation.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering