Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology

J. S. Rieh, O. Qasaimeh, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.

Original languageEnglish
Pages (from-to)63-65
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Issue number2
Publication statusPublished - 1998 Feb
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received September 8, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the AFOSR under Grant F49620-95-1-0013.


  • Feedback
  • Fiber optical communication
  • Heterojunction bipolar transistor (HBT)
  • SiGe

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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