Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology

J. S. Rieh; O. Qasaimeh; L. H. Lu; K. Yang; L. P.B. Katehi; P. Bhattacharya; E. T. Croke

doi:10.1109/75.658642

Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology

J. S. Rieh, O. Qasaimeh, L. H. Lu, K. Yang, L. P.B. Katehi, P. Bhattacharya, E. T. Croke

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.

Original language	English
Pages (from-to)	63-65
Number of pages	3
Journal	IEEE Microwave and Guided Wave Letters
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/75.658642
Publication status	Published - 1998 Feb
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received September 8, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the AFOSR under Grant F49620-95-1-0013.

Keywords

Feedback
Fiber optical communication
Heterojunction bipolar transistor (HBT)
SiGe

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1109/75.658642

Cite this

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title = "Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology",

abstract = "Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.",

keywords = "Feedback, Fiber optical communication, Heterojunction bipolar transistor (HBT), SiGe",

author = "Rieh, {J. S.} and O. Qasaimeh and Lu, {L. H.} and K. Yang and Katehi, {L. P.B.} and P. Bhattacharya and Croke, {E. T.}",

note = "Funding Information: Manuscript received September 8, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the AFOSR under Grant F49620-95-1-0013.",

year = "1998",

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doi = "10.1109/75.658642",

language = "English",

volume = "8",

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T1 - Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology

AU - Rieh, J. S.

AU - Qasaimeh, O.

AU - Lu, L. H.

AU - Yang, K.

AU - Katehi, L. P.B.

AU - Bhattacharya, P.

AU - Croke, E. T.

N1 - Funding Information: Manuscript received September 8, 1997. This work was supported by NASA-Cleveland under Grant NAG3-1903 and by the AFOSR under Grant F49620-95-1-0013.

PY - 1998/2

Y1 - 1998/2

N2 - Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.

AB - Monolithically integrated SiGe/Si heterojunction bipolar transistor (HBT) transimpedance amplifiers, with single- and dual-feedback configurations, have been designed, fabricated, and characterized. The single-feedback amplifier showed transimpedance gain and bandwidth of 45.2 dBΩ and 3.2 GHz, respectively. The dual-feedback version exhibits improved gain and bandwidth of 47.4 dBΩ and 3.3 GHz, respectively. Their performance characteristics are excellent in terms of their application in communication systems.

KW - Feedback

KW - Fiber optical communication

KW - Heterojunction bipolar transistor (HBT)

KW - SiGe

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Single- and Dual-Feedback Transimpedance Amplifiers Implemented by SiGe HBT Technology

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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