TY - JOUR
T1 - Single-electron spectroscopy in a coupled triple-dot system
T2 - Role of interdot electron-electron interactions
AU - Lee, S.
AU - Park, K.
AU - Park, J.
AU - Choi, Jung B.
AU - Yang, S. R.Eric
PY - 2000
Y1 - 2000
N2 - We report on low-temperature single electron tunneling measurements of a coupled triple-dot system with tunable gate fabricated on a silicon-on-insulator structure. Conductance peak positions have been measured as a function of the interdot tunneling constant. We observe one peak at small values of the tunneling constant, and, as the tunneling constant increases, we find that this peak splits into several peaks with uneven spacings. This observed behavior of the conductance peak positions has been modeled by a three-site extended Hubbard model with interdot electron-electron interactions.
AB - We report on low-temperature single electron tunneling measurements of a coupled triple-dot system with tunable gate fabricated on a silicon-on-insulator structure. Conductance peak positions have been measured as a function of the interdot tunneling constant. We observe one peak at small values of the tunneling constant, and, as the tunneling constant increases, we find that this peak splits into several peaks with uneven spacings. This observed behavior of the conductance peak positions has been modeled by a three-site extended Hubbard model with interdot electron-electron interactions.
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U2 - 10.1103/PhysRevB.62.R7735
DO - 10.1103/PhysRevB.62.R7735
M3 - Article
AN - SCOPUS:0000243753
SN - 1098-0121
VL - 62
SP - R7735-R7738
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 12
ER -