Single n-GaN microwire/p-silicon thin film heterojunction light-emitting diode

Jaehui Ahn, Michael A. Mastro, Paul B. Klein, Jennifer K. Hite, Boris Feigelson, Charles R. Eddy, Jihyun Kim

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)

    Abstract

    The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.

    Original languageEnglish
    Pages (from-to)21692-21697
    Number of pages6
    JournalOptics Express
    Volume19
    Issue number22
    DOIs
    Publication statusPublished - 2011 Oct 24

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

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