Abstract
The emission and waveguiding properties of individual GaN microwires as well as devices based on an n-GaN microwire/p-Si (100) junction were studied for relevance in optoelectronics and optical circuits. Pulsed photoluminescence of the GaN microwire excited in the transverse or longitudinal direction demonstrated gain. These n-type GaN microwires were positioned mechanically or by dielectrophoretic force onto prepatterned electrodes on a p-type Si (100) substrate. Electroluminescence from this p-n point junction was characteristic of a heterostructure lightemitting diode. Additionally, waveguiding was observed along the length of the microwire for light originating from photoluminescence as well as from electroluminescence generated at the p-n junction.
Original language | English |
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Pages (from-to) | 21692-21697 |
Number of pages | 6 |
Journal | Optics Express |
Volume | 19 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2011 Oct 24 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics