Single Silicon Neuron Device Enabling Neuronal Oscillation and Stochastic Dynamics

Doohyeok Lim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


In this work, we report a fully CMOS-compatible single silicon neuron device, by exploiting interlinked positive and negative feedback loops. The neuron device exhibits the key features of leaky integrate-and-fire functionality and can produce neuronal oscillations that resemble biological oscillations. The stochastic nature and analog input-sensitivity of the feedback switching dynamics are observed in the device. Moreover, the neuronal oscillations of the two-terminal device do not require any power supplied by external bias lines.

Original languageEnglish
Article number9370093
Pages (from-to)649-652
Number of pages4
JournalIEEE Electron Device Letters
Issue number5
Publication statusPublished - 2021 May

Bibliographical note

Funding Information:
Manuscript received February 8, 2021; revised February 25, 2021; accepted March 2, 2021. Date of publication March 4, 2021; date of current version April 26, 2021. This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE) under Grant 10067791, in part by the Korea Semiconductor Research Consortium (KSRC) Support Program for the development of future semiconductor devices, in part by the National Research Foundation of Korea (NRF) Grant by the Korean Government through the Ministry of Science and ICT (MSIT) under Grant 2020R1A2C3004538, in part by the Brain Korea 21 Plus Project in 2021, and in part by the Korea University Grant. The review of this letter was arranged by Editor B. Govoreanu. (Corresponding author: Sangsig Kim.) The authors are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail:

Publisher Copyright:
© 1980-2012 IEEE.


  • Complementary metal-oxide-semiconductor
  • leaky integrate-and-fire neuron
  • neuromorphic computing
  • oscillation
  • stochastic neuron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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