Abstract
The optoelectronic characteristics of HgSe nanoparticle films spin-coated on flexible plastic substrates are investigated under the illumination of 1.3 μm wavelength light. The sintering process improves the optoelectronic characteristics of the HgSe nanoparticle films. The photocurrent of the sintered HgSe nanoparticle films under the illumination of 1.3 μm wavelength light is approximately 20 times larger in magnitude than that of the non-sintered films in air at room temperature. Moreover, the endurance of the flexible optoelectronic device investigated by the continuous substrate bending test reveals that the photocurrent efficiency changes negligibly up to 250 cycles.
| Original language | English |
|---|---|
| Pages (from-to) | 246-249 |
| Number of pages | 4 |
| Journal | Materials Chemistry and Physics |
| Volume | 122 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2010 Jul 1 |
Keywords
- Chalcogenides
- Optical properties
- Semiconductors
- Sintering
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics