SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate

Yoon Ho Cho; Sang Bu Ha; Dae Soo Jung; Yun Chan Kang; Jong Heun Lee

doi:10.1149/1.3280016

SiO₂ -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate

Yoon Ho Cho, Sang Bu Ha, Dae Soo Jung, Yun Chan Kang, Jong Heun Lee

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

The effect of SiO₂ impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La_0.8 Sr_0.2 Ga _0.8 Mg_0.2 O_3-δ, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO₂, while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO₂. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.

Original language	English
Pages (from-to)	B28-B31
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	3
DOIs	https://doi.org/10.1149/1.3280016
Publication status	Published - 2010

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate",

abstract = "The effect of SiO2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La0.8 Sr0.2 Ga 0.8 Mg0.2 O3-δ, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO2, while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO2. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.",

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T1 - SiO2 -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate

AU - Cho, Yoon Ho

AU - Ha, Sang Bu

AU - Jung, Dae Soo

AU - Kang, Yun Chan

AU - Lee, Jong Heun

PY - 2010

Y1 - 2010

N2 - The effect of SiO2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La0.8 Sr0.2 Ga 0.8 Mg0.2 O3-δ, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO2, while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO2. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.

AB - The effect of SiO2 impurity on the grain-boundary conduction in Sr- and Mg-doped lanthanum gallate (La0.8 Sr0.2 Ga 0.8 Mg0.2 O3-δ, LSGM) was studied. The grain-boundary conduction of LSGM was slightly affected, even by the addition of 500-2000 ppm SiO2, while the apparent grain-boundary resistivity was increased up to ∼780 times in gadolinia-doped ceria by the doping of 500-2000 ppm SiO2. The high tolerance of the grain-boundary conduction against siliceous impurity in the LSGM specimen was explained by the gathering of the acidic siliceous phase near the basic SrO component.

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DO - 10.1149/1.3280016

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SN - 1099-0062

VL - 13

SP - B28-B31

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 3

ER -

SiO₂ -Tolerant grain-boundary conduction in Sr- and Mg-doped lanthanum gallate

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