Skewed ion beam etching: A simple method to obtain a reduction in critical dimensions for magnetoelectronic sensors

Young Keun Kim; Won Je Jeong; H. J. Hahm

doi:10.1016/j.sna.2004.03.003

Skewed ion beam etching: A simple method to obtain a reduction in critical dimensions for magnetoelectronic sensors

Young Keun Kim^*
, Won Je Jeong
, H. J. Hahm

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The skewed ion beam etching process (SIBE) was contrived as well as implemented to generate a lead-overlaid giant magnetoresistive read sensor structure in submicrometer scale. The key concept of this process is based on the shadowing effect arising from the pattern height and incident ion beam angle. Due to shadowing, the desired critical dimension such as lead-to-lead distance can be smaller compared to the distance between a set of photoresist patterns. The SIBE was performed under Ar and CHF₃ reactive environment where the etch selectivity between the photoresist and sacrificial alumina layer was high. A lead-to-lead distance of 0.35μm was accomplished starting with a 0.9μm photoresist pattern.

Original language	English
Pages (from-to)	236-239
Number of pages	4
Journal	Sensors and Actuators, A: Physical
Volume	113
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2004.03.003
Publication status	Published - 2004 Jul 5

Keywords

Etch selectivity
Ion beam etching
Magnetoresistive device
Shadowing effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2004.03.003

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title = "Skewed ion beam etching: A simple method to obtain a reduction in critical dimensions for magnetoelectronic sensors",

abstract = "The skewed ion beam etching process (SIBE) was contrived as well as implemented to generate a lead-overlaid giant magnetoresistive read sensor structure in submicrometer scale. The key concept of this process is based on the shadowing effect arising from the pattern height and incident ion beam angle. Due to shadowing, the desired critical dimension such as lead-to-lead distance can be smaller compared to the distance between a set of photoresist patterns. The SIBE was performed under Ar and CHF3 reactive environment where the etch selectivity between the photoresist and sacrificial alumina layer was high. A lead-to-lead distance of 0.35μm was accomplished starting with a 0.9μm photoresist pattern.",

keywords = "Etch selectivity, Ion beam etching, Magnetoresistive device, Shadowing effect",

author = "Kim, \{Young Keun\} and Jeong, \{Won Je\} and Hahm, \{H. J.\}",

year = "2004",

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doi = "10.1016/j.sna.2004.03.003",

language = "English",

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journal = "Sensors and Actuators, A: Physical",

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T1 - Skewed ion beam etching

T2 - A simple method to obtain a reduction in critical dimensions for magnetoelectronic sensors

AU - Kim, Young Keun

AU - Jeong, Won Je

AU - Hahm, H. J.

PY - 2004/7/5

Y1 - 2004/7/5

N2 - The skewed ion beam etching process (SIBE) was contrived as well as implemented to generate a lead-overlaid giant magnetoresistive read sensor structure in submicrometer scale. The key concept of this process is based on the shadowing effect arising from the pattern height and incident ion beam angle. Due to shadowing, the desired critical dimension such as lead-to-lead distance can be smaller compared to the distance between a set of photoresist patterns. The SIBE was performed under Ar and CHF3 reactive environment where the etch selectivity between the photoresist and sacrificial alumina layer was high. A lead-to-lead distance of 0.35μm was accomplished starting with a 0.9μm photoresist pattern.

AB - The skewed ion beam etching process (SIBE) was contrived as well as implemented to generate a lead-overlaid giant magnetoresistive read sensor structure in submicrometer scale. The key concept of this process is based on the shadowing effect arising from the pattern height and incident ion beam angle. Due to shadowing, the desired critical dimension such as lead-to-lead distance can be smaller compared to the distance between a set of photoresist patterns. The SIBE was performed under Ar and CHF3 reactive environment where the etch selectivity between the photoresist and sacrificial alumina layer was high. A lead-to-lead distance of 0.35μm was accomplished starting with a 0.9μm photoresist pattern.

KW - Etch selectivity

KW - Ion beam etching

KW - Magnetoresistive device

KW - Shadowing effect

UR - https://www.scopus.com/pages/publications/2942610808

U2 - 10.1016/j.sna.2004.03.003

DO - 10.1016/j.sna.2004.03.003

M3 - Article

AN - SCOPUS:2942610808

SN - 0924-4247

VL - 113

SP - 236

EP - 239

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 2

ER -

Skewed ion beam etching: A simple method to obtain a reduction in critical dimensions for magnetoelectronic sensors

Abstract

Keywords

ASJC Scopus subject areas

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