Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

Jae Sung Rieh; Liang Hung Lu; Zhenqiang Ma; Xuefeng Liu; P. B. Katehi; Pallab Bhattacharya

Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

Jae Sung Rieh, Liang Hung Lu, Zhenqiang Ma, Xuefeng Liu, P. B. Katehi, Pallab Bhattacharya

Research output: Contribution to journal › Conference article › peer-review

Abstract

Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show f_max of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and P_out at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.

Original language	English
Pages (from-to)	1191-1194
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	3
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' - Anaheim, CA, USA Duration: 1999 Jun 13 → 1999 Jun 19

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{7360aa378a3649258409a8138ed7fd9c,

title = "Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's",

abstract = "Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show fmax of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and Pout at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.",

author = "Rieh, {Jae Sung} and Lu, {Liang Hung} and Zhenqiang Ma and Xuefeng Liu and Katehi, {P. B.} and Pallab Bhattacharya",

year = "1999",

language = "English",

volume = "3",

pages = "1191--1194",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves' ; Conference date: 13-06-1999 Through 19-06-1999",

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TY - JOUR

T1 - Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

AU - Rieh, Jae Sung

AU - Lu, Liang Hung

AU - Ma, Zhenqiang

AU - Liu, Xuefeng

AU - Katehi, P. B.

AU - Bhattacharya, Pallab

PY - 1999

Y1 - 1999

N2 - Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show fmax of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and Pout at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.

AB - Common-emitter(CE) and common-base(CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE device show fmax of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and Pout at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.

UR - http://www.scopus.com/inward/record.url?scp=0033360057&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033360057

SN - 0149-645X

VL - 3

SP - 1191

EP - 1194

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

T2 - Proceedings of the 1999 IEEE MTT-S International Microwave Symposium Digest 'The Magic Touch of Microwaves'

Y2 - 13 June 1999 through 19 June 1999

ER -

Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT's

Abstract

ASJC Scopus subject areas

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