Abstract
The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ∼ 11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.
Original language | English |
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Pages (from-to) | 355-358 |
Number of pages | 4 |
Journal | Solid-State Electronics |
Volume | 48 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2004 Feb |
Externally published | Yes |
Bibliographical note
Funding Information:This work at UF is partially supported by contracts from AFOSR (F49620-02-1-0366, G. Witt), ONR (N0014-98-1-02-04, H.B. Dietrich), and NSF grant no. DMR0101438.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering