Small signal measurement of Sc2O3 AlGaN/GaN moshemts

B. Luo; R. Mehandru; B. S. Kang; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; D. Gotthold; R. Birkhahn; B. Peres; R. Fitch; J. K. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo

doi:10.1016/S0038-1101(03)00322-8

Small signal measurement of Sc₂O₃ AlGaN/GaN moshemts

B. Luo
, R. Mehandru
, B. S. Kang
, J. Kim
, F. Ren^*
, B. P. Gila
, A. H. Onstine
, C. R. Abernathy
, S. J. Pearton
, D. Gotthold
, R. Birkhahn
, B. Peres
, R. Fitch
, J. K. Gillespie
, T. Jenkins
, J. Sewell
, D. Via
, A. Crespo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The rf performance of 1 × 200 μm² AlGaN/GaN MOS-HEMTs with Sc₂O₃ used as both the gate dielectric and as a surface passivation layer is reported. A maximum f_T of ∼ 11 GHz and f_MAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.

Original language	English
Pages (from-to)	355-358
Number of pages	4
Journal	Solid-State Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(03)00322-8
Publication status	Published - 2004 Feb
Externally published	Yes

Bibliographical note

Funding Information:
This work at UF is partially supported by contracts from AFOSR (F49620-02-1-0366, G. Witt), ONR (N0014-98-1-02-04, H.B. Dietrich), and NSF grant no. DMR0101438.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0038-1101(03)00322-8

Cite this

Luo, B., Mehandru, R., Kang, B. S., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J. K., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2004). Small signal measurement of Sc₂O₃ AlGaN/GaN moshemts. Solid-State Electronics, 48(2), 355-358. https://doi.org/10.1016/S0038-1101(03)00322-8

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title = "Small signal measurement of Sc2O3 AlGaN/GaN moshemts",

abstract = "The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ∼ 11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.",

author = "B. Luo and R. Mehandru and Kang, \{B. S.\} and J. Kim and F. Ren and Gila, \{B. P.\} and Onstine, \{A. H.\} and Abernathy, \{C. R.\} and Pearton, \{S. J.\} and D. Gotthold and R. Birkhahn and B. Peres and R. Fitch and Gillespie, \{J. K.\} and T. Jenkins and J. Sewell and D. Via and A. Crespo",

note = "Funding Information: This work at UF is partially supported by contracts from AFOSR (F49620-02-1-0366, G. Witt), ONR (N0014-98-1-02-04, H.B. Dietrich), and NSF grant no. DMR0101438.",

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T1 - Small signal measurement of Sc2O3 AlGaN/GaN moshemts

AU - Luo, B.

AU - Mehandru, R.

AU - Kang, B. S.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gotthold, D.

AU - Birkhahn, R.

AU - Peres, B.

AU - Fitch, R.

AU - Gillespie, J. K.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

N1 - Funding Information: This work at UF is partially supported by contracts from AFOSR (F49620-02-1-0366, G. Witt), ONR (N0014-98-1-02-04, H.B. Dietrich), and NSF grant no. DMR0101438.

PY - 2004/2

Y1 - 2004/2

N2 - The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ∼ 11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.

AB - The rf performance of 1 × 200 μm2 AlGaN/GaN MOS-HEMTs with Sc2O3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum fT of ∼ 11 GHz and fMAX of 19 GHz were obtained. The equivalent device parameters were extracted by fitting this data to obtain the transconductance, drain resistance, drain-source resistance, transfer time and gate-drain and gate-source capacitance as a function of gate voltage. The transfer time is in the order 0.5-1 ps and decreases with increasing gate voltage.

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