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Small signal measurement of Sc
2
O
3
AlGaN/GaN moshemts
B. Luo
, R. Mehandru
, B. S. Kang
, J. Kim
, F. Ren
*
, B. P. Gila
, A. H. Onstine
, C. R. Abernathy
, S. J. Pearton
, D. Gotthold
, R. Birkhahn
, B. Peres
, R. Fitch
, J. K. Gillespie
, T. Jenkins
, J. Sewell
, D. Via
, A. Crespo
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
11
Citations (Scopus)
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2
O
3
AlGaN/GaN moshemts'. Together they form a unique fingerprint.
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Keyphrases
AlGaN-GaN
100%
Scandium Oxide
100%
Gate Voltage
100%
Transfer Time
100%
Small-signal Measurements
100%
Gate Dielectric
50%
Surface Passivation Layer
50%
Gate Capacitance
50%
Device Parameters
50%
Transconductance
50%
Fmax
50%
Drain Resistance
50%
Transfer Resistance
50%
GaN MOS-HEMTs
50%
Transfer Gate
50%
Source Resistance
50%
Engineering
Gate Voltage
100%
Measurement Signal
100%
Gate Dielectric
50%
Passivation Layer
50%
Rf Performance
50%
Source Resistance
50%
Material Science
Surface Passivation
100%
Capacitance
100%
Dielectric Material
100%