Soft-type trap-induced degradation of MoS2 field effect transistors

Young Hoon Cho, Min Yeul Ryu, Kook Jin Lee, So Jeong Park, Jun Hee Choi, Byung Chul Lee, Wungyeon Kim, Gyu Tae Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Original languageEnglish
Article number22LT01
Issue number22
Publication statusPublished - 2018 Apr 4

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (10067739) funded by the Ministry of Trade, Industry & Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC).

Publisher Copyright:
© 2018 IOP Publishing Ltd.


  • CNFCMF model
  • MoS
  • degradation
  • low frequency noise

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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