Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake

Sooyeoun Oh, Michael A. Mastro, Marko J. Tadjer, Jihyun Kim

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94 Citations (Scopus)


Semiconductor materials ideal for solar-blind photodetectors (PDs) require an ultra-wide and direct bandgap to detect UV-C spectral wavelengths effectively. Using the mechanically exfoliated high-quality β-Ga2O3 micro-flakes that have a direct bandgap of ∼4.8 eV, we fabricated solar-blind PDs with a metal-semiconductor-metal (MSM) structure that can reduce the dark current, and then systemically investigated their photoresponse properties. The MSM devices with two Ni/Au Schottky contacts exhibited an extremely low dark current and high sensitivity (ratio of photocurrent to dark current > 103) in UV-C wavelengths. In addition, they exhibited fast and stable on/off characteristics and high responsivity (1.68 A/W), with a superior rejection ratio when compared with the reported thin-film MSM solar-blind PDs, indicating the high potential of the quasi-two-dimensional β-Ga2O3 for optoelectronic applications.

Original languageEnglish
Pages (from-to)Q79-Q83
JournalECS Journal of Solid State Science and Technology
Issue number8
Publication statusPublished - 2017

Bibliographical note

Publisher Copyright:
© 2017 The Electrochemical Society. All rights reserved.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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