Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

Sang Il Shin; Jae Hong Kwon; Hochul Kang; Byeong Kwon Ju

doi:10.1088/0268-1242/23/8/085009

Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

Sang Il Shin^*
, Jae Hong Kwon
, Hochul Kang
, Byeong Kwon Ju

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10^-2 cm² V^-1 s^-1, a current on/off ratio of 10⁵, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

Original language	English
Pages (from-to)	85009
Number of pages	1
Journal	Semiconductor Science and Technology
Volume	23
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/23/8/085009
Publication status	Published - 2008 Aug 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/23/8/085009

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@article{61bf26a5a7784af88f57a10566fdda81,

title = "Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate",

abstract = "The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10-2 cm2 V-1 s-1, a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.",

author = "Shin, \{Sang Il\} and Kwon, \{Jae Hong\} and Hochul Kang and Ju, \{Byeong Kwon\}",

year = "2008",

month = aug,

day = "1",

doi = "10.1088/0268-1242/23/8/085009",

language = "English",

volume = "23",

pages = "85009",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

AU - Shin, Sang Il

AU - Kwon, Jae Hong

AU - Kang, Hochul

AU - Ju, Byeong Kwon

PY - 2008/8/1

Y1 - 2008/8/1

N2 - The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10-2 cm2 V-1 s-1, a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

AB - The authors report the fabrication of solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a cross-linked poly-4-vinylphenol (PVP) dielectric on a polyethersulphone (PES) substrate. The device exhibited useful electrical characteristics, including a saturation field effect mobility of 2.08 × 10-2 cm2 V-1 s-1, a current on/off ratio of 105, a threshold voltage of -2 V and an excellent subthreshold slope of 0.86 V/dec. It was demonstrated that the significant improvement in the subthreshold slope of TIPS-pentacene TFTs could be attributed to a decreased carrier trap density at the PVP/TIPS-pentacene film interface. Furthermore, a 1,2,3,4- tetrahydronaphthalene (Tetralin) solvent used in this study had a high boiling point, which had a positive effect on the morphology and the molecular ordering of the TIPS-pentacene film.

UR - https://www.scopus.com/pages/publications/51849119620

U2 - 10.1088/0268-1242/23/8/085009

DO - 10.1088/0268-1242/23/8/085009

M3 - Article

AN - SCOPUS:51849119620

SN - 0268-1242

VL - 23

SP - 85009

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Solution-processed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors with a polymer dielectric on a flexible substrate

Abstract

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