Solution-processed flexible NiO resistive random access memory device

Soo Jung Kim, Heon Lee, Sung Hoon Hong

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Original languageEnglish
Pages (from-to)56-61
Number of pages6
JournalSolid-State Electronics
Publication statusPublished - 2018 Apr

Bibliographical note

Funding Information:
This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Planning ( NRF-2013M3C1A3063046 ), Samsung Electronics, and Institute for Information & Communications Technology Promotion (IITP) grant funded by the Korean government (MSIP) ( B0117-16-1004 ).

Publisher Copyright:
© 2018

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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