Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors

S. Choi; B. Y. Park; M. Jang; S. Jeong; J. Y. Lee; B. H. Ryu; T. Y. Seong; H. K. Jung

doi:10.1149/1.3572327

Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors

S. Choi, B. Y. Park, M. Jang, S. Jeong, J. Y. Lee, B. H. Ryu, T. Y. Seong, H. K. Jung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

ZnO-based low power operating thin film transistors (TFTs) were fabricated by a simple and robust solution process. Combined the amorphous oxide semiconductors with the high capacitance lanthanide oxides thin film, Y ₂O₃ and Gd₂O₃, as a gate insulator, the resultant device exhibits an enhanced device performance; lower threshold voltage, increased carrier mobility, and smaller subthreshold slope with exceptionally low operating voltage than the typical TFT devices using a SiO₂ gate insulator.

Original language	English
Title of host publication	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Publisher	Electrochemical Society Inc.
Pages	901-908
Number of pages	8
Edition	4
ISBN (Electronic)	9781607682158
ISBN (Print)	9781566778657
DOIs	https://doi.org/10.1149/1.3572327
Publication status	Published - 2011

Publication series

Name	ECS Transactions
Number	4
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

General Engineering

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10.1149/1.3572327

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Choi, S., Park, B. Y., Jang, M., Jeong, S., Lee, J. Y., Ryu, B. H., Seong, T. Y., & Jung, H. K. (2011). Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 901-908). (ECS Transactions; Vol. 35, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/1.3572327

Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. / Choi, S.; Park, B. Y.; Jang, M. et al.
Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4. ed. Electrochemical Society Inc., 2011. p. 901-908 (ECS Transactions; Vol. 35, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Choi, S, Park, BY, Jang, M, Jeong, S, Lee, JY, Ryu, BH, Seong, TY & Jung, HK 2011, Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 edn, ECS Transactions, no. 4, vol. 35, Electrochemical Society Inc., pp. 901-908. https://doi.org/10.1149/1.3572327

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AB - ZnO-based low power operating thin film transistors (TFTs) were fabricated by a simple and robust solution process. Combined the amorphous oxide semiconductors with the high capacitance lanthanide oxides thin film, Y 2O3 and Gd2O3, as a gate insulator, the resultant device exhibits an enhanced device performance; lower threshold voltage, increased carrier mobility, and smaller subthreshold slope with exceptionally low operating voltage than the typical TFT devices using a SiO2 gate insulator.

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Solution processed high-κ lanthanide oxides for low voltage driven transparent oxide semiconductor thin film transistors

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