Solution processed high band-gap CuInGaS2 thin film for solar cell applications

Se Jin Park; Jin Woo Cho; Joong Kee Lee; Keeshik Shin; Ji Hyun Kim; Byoung Koun Min

doi:10.1002/pip.2354

Solution processed high band-gap CuInGaS₂ thin film for solar cell applications

Se Jin Park, Jin Woo Cho, Joong Kee Lee, Keeshik Shin, Ji Hyun Kim, Byoung Koun Min

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS₂) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS₂ crystallites. Because of the high band-gap optical property of the CuInGaS₂ absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.

Original language	English
Pages (from-to)	122-128
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	22
Issue number	1
DOIs	https://doi.org/10.1002/pip.2354
Publication status	Published - 2014 Jan

Keywords

CIGS
CuInGaS
high band-gap
solar cells
solution process

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pip.2354

Cite this

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title = "Solution processed high band-gap CuInGaS2 thin film for solar cell applications",

abstract = "A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.",

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AU - Cho, Jin Woo

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AU - Shin, Keeshik

AU - Kim, Ji Hyun

AU - Min, Byoung Koun

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AB - A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.

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