Solution processed high band-gap CuInGaS2 thin film for solar cell applications

Se Jin Park, Jin Woo Cho, Joong Kee Lee, Keeshik Shin, Ji Hyun Kim, Byoung Koun Min

    Research output: Contribution to journalArticlepeer-review

    64 Citations (Scopus)

    Abstract

    A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.

    Original languageEnglish
    Pages (from-to)122-128
    Number of pages7
    JournalProgress in Photovoltaics: Research and Applications
    Volume22
    Issue number1
    DOIs
    Publication statusPublished - 2014 Jan

    Keywords

    • CIGS
    • CuInGaS
    • high band-gap
    • solar cells
    • solution process

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Renewable Energy, Sustainability and the Environment
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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