Solution processed high band-gap CuInGaS2 thin film for solar cell applications

Se Jin Park, Jin Woo Cho, Joong Kee Lee, Keeshik Shin, Ji Hyun Kim, Byoung Koun Min

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)


A high band-gap (~1.55 eV) chalcopyrite compound film (CuInGaS2) was synthesized by a precursor solution-based coating method with an oxidation and a sulfurization heat treatment process. The film revealed two distinct morphologies: a densely packed bulk layer and a rough surface layer. We found that the rough surface is attributed to the formation of Ga deficient CuInGaS2 crystallites. Because of the high band-gap optical property of the CuInGaS2 absorber film, a solar cell device with this film showed a relatively high open circuit voltage (~787 mV) with a power conversion efficiency of 8.28% under standard irradiation conditions.

Original languageEnglish
Pages (from-to)122-128
Number of pages7
JournalProgress in Photovoltaics: Research and Applications
Issue number1
Publication statusPublished - 2014 Jan


  • CIGS
  • CuInGaS
  • high band-gap
  • solar cells
  • solution process

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Solution processed high band-gap CuInGaS2 thin film for solar cell applications'. Together they form a unique fingerprint.

Cite this