Solution processed WO3 layer for the replacement of PEDOT:PSS layer in organic photovoltaic cells

Hana Choi; Bongsoo Kim; Min Jae Ko; Doh Kwon Lee; Honggon Kim; Sung Hyun Kim; Kyungkon Kim

doi:10.1016/j.orgel.2012.01.033

Solution processed WO₃ layer for the replacement of PEDOT:PSS layer in organic photovoltaic cells

Hana Choi, Bongsoo Kim, Min Jae Ko, Doh Kwon Lee, Honggon Kim, Sung Hyun Kim, Kyungkon Kim

Research output: Contribution to journal › Article › peer-review

128 Citations (Scopus)

Abstract

Tungsten oxide layer is formed uniformly by a sol-gel technique on top of indium tin oxide as a neutral and photo-stable hole extraction layer (HEL). The solution processed tungsten oxide layer (sWO₃) is fully characterized by UV-Vis, XPS, UPS, XRD, AFM, and TEM. Optical transmission of ITO/sWO ₃ substrates is nearly identical to ITOs. In addition, the sWO ₃ layer induces nearly ohmic contact to P3HT as PEDOT:PSS layer does, which is determined by UPS measurement. In case that an optimized thickness (∼10 nm) of the sWO₃ layer is incorporated in the organic photovoltaic devices (OPVs) with a structure of ITO/sWO₃/P3HT:PCBM/ Al, the power conversion efficiency (PCE) is 3.4%, comparable to that of devices utilizing PEDOT:PSS as HEL. Furthermore, the stability of OPV utilizing sWO₃ is significantly enhanced due to the air- and photo-stability of the sWO₃ layer itself. PCEs are decreased to 40% and 0% of initial values, when PEDOT:PSS layers are exposed to air and light for 192 h, respectively. In contrast, PCEs are maintained to 90% and 87% of initial PCEs respectively, when sWO₃ layers are exposed to the same conditions. Conclusively, we find that solution processed tungsten oxide layers can be prepared easily, act as an efficient hole extraction layer, and afford a much higher stability than PEDOT:PSS layers.

Original language	English
Pages (from-to)	959-968
Number of pages	10
Journal	Organic Electronics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.orgel.2012.01.033
Publication status	Published - 2012 Jun

Bibliographical note

Funding Information:
This research was supported by New and Renewable Energy Program through the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (MKE) ( 008NPV08J010000 ), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( 2009-0081500 ) and Industry Resource Technology Development Program (Contract: 10034648) from Korea Ministry of Knowledge and Economy.

Keywords

Device stability
Hole extraction layer
Metal oxide
Organic photovoltaic cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.orgel.2012.01.033

Cite this

@article{06b927dec4e041fca48ee6613061deb7,

title = "Solution processed WO3 layer for the replacement of PEDOT:PSS layer in organic photovoltaic cells",

abstract = "Tungsten oxide layer is formed uniformly by a sol-gel technique on top of indium tin oxide as a neutral and photo-stable hole extraction layer (HEL). The solution processed tungsten oxide layer (sWO3) is fully characterized by UV-Vis, XPS, UPS, XRD, AFM, and TEM. Optical transmission of ITO/sWO 3 substrates is nearly identical to ITOs. In addition, the sWO 3 layer induces nearly ohmic contact to P3HT as PEDOT:PSS layer does, which is determined by UPS measurement. In case that an optimized thickness (∼10 nm) of the sWO3 layer is incorporated in the organic photovoltaic devices (OPVs) with a structure of ITO/sWO3/P3HT:PCBM/ Al, the power conversion efficiency (PCE) is 3.4%, comparable to that of devices utilizing PEDOT:PSS as HEL. Furthermore, the stability of OPV utilizing sWO3 is significantly enhanced due to the air- and photo-stability of the sWO3 layer itself. PCEs are decreased to 40% and 0% of initial values, when PEDOT:PSS layers are exposed to air and light for 192 h, respectively. In contrast, PCEs are maintained to 90% and 87% of initial PCEs respectively, when sWO3 layers are exposed to the same conditions. Conclusively, we find that solution processed tungsten oxide layers can be prepared easily, act as an efficient hole extraction layer, and afford a much higher stability than PEDOT:PSS layers.",

keywords = "Device stability, Hole extraction layer, Metal oxide, Organic photovoltaic cells",

author = "Hana Choi and Bongsoo Kim and Ko, {Min Jae} and Lee, {Doh Kwon} and Honggon Kim and Kim, {Sung Hyun} and Kyungkon Kim",

note = "Funding Information: This research was supported by New and Renewable Energy Program through the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (MKE) ( 008NPV08J010000 ), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( 2009-0081500 ) and Industry Resource Technology Development Program (Contract: 10034648) from Korea Ministry of Knowledge and Economy. ",

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AU - Choi, Hana

AU - Kim, Bongsoo

AU - Ko, Min Jae

AU - Lee, Doh Kwon

AU - Kim, Honggon

AU - Kim, Sung Hyun

AU - Kim, Kyungkon

N1 - Funding Information: This research was supported by New and Renewable Energy Program through the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy (MKE) ( 008NPV08J010000 ), the Pioneer Research Center Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( 2009-0081500 ) and Industry Resource Technology Development Program (Contract: 10034648) from Korea Ministry of Knowledge and Economy.

PY - 2012/6

Y1 - 2012/6

N2 - Tungsten oxide layer is formed uniformly by a sol-gel technique on top of indium tin oxide as a neutral and photo-stable hole extraction layer (HEL). The solution processed tungsten oxide layer (sWO3) is fully characterized by UV-Vis, XPS, UPS, XRD, AFM, and TEM. Optical transmission of ITO/sWO 3 substrates is nearly identical to ITOs. In addition, the sWO 3 layer induces nearly ohmic contact to P3HT as PEDOT:PSS layer does, which is determined by UPS measurement. In case that an optimized thickness (∼10 nm) of the sWO3 layer is incorporated in the organic photovoltaic devices (OPVs) with a structure of ITO/sWO3/P3HT:PCBM/ Al, the power conversion efficiency (PCE) is 3.4%, comparable to that of devices utilizing PEDOT:PSS as HEL. Furthermore, the stability of OPV utilizing sWO3 is significantly enhanced due to the air- and photo-stability of the sWO3 layer itself. PCEs are decreased to 40% and 0% of initial values, when PEDOT:PSS layers are exposed to air and light for 192 h, respectively. In contrast, PCEs are maintained to 90% and 87% of initial PCEs respectively, when sWO3 layers are exposed to the same conditions. Conclusively, we find that solution processed tungsten oxide layers can be prepared easily, act as an efficient hole extraction layer, and afford a much higher stability than PEDOT:PSS layers.

AB - Tungsten oxide layer is formed uniformly by a sol-gel technique on top of indium tin oxide as a neutral and photo-stable hole extraction layer (HEL). The solution processed tungsten oxide layer (sWO3) is fully characterized by UV-Vis, XPS, UPS, XRD, AFM, and TEM. Optical transmission of ITO/sWO 3 substrates is nearly identical to ITOs. In addition, the sWO 3 layer induces nearly ohmic contact to P3HT as PEDOT:PSS layer does, which is determined by UPS measurement. In case that an optimized thickness (∼10 nm) of the sWO3 layer is incorporated in the organic photovoltaic devices (OPVs) with a structure of ITO/sWO3/P3HT:PCBM/ Al, the power conversion efficiency (PCE) is 3.4%, comparable to that of devices utilizing PEDOT:PSS as HEL. Furthermore, the stability of OPV utilizing sWO3 is significantly enhanced due to the air- and photo-stability of the sWO3 layer itself. PCEs are decreased to 40% and 0% of initial values, when PEDOT:PSS layers are exposed to air and light for 192 h, respectively. In contrast, PCEs are maintained to 90% and 87% of initial PCEs respectively, when sWO3 layers are exposed to the same conditions. Conclusively, we find that solution processed tungsten oxide layers can be prepared easily, act as an efficient hole extraction layer, and afford a much higher stability than PEDOT:PSS layers.

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KW - Metal oxide

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