Source-Line Shared SOT-MRAM Cell for Energy Efficient Read Operation

Taehwan Kim, Jongsun Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Spin-orbit torque magnetic random access memory (SOT-MRAM) has recently gained great attention due to its various benefits on memory implementation. However, SOT-MRAM's read operation still shows large delay with large energy consumption, making it difficult to replace conventional CMOS-based memories. In this paper, a source-line shared (SLS) 2T SOT-MRAM cell structure is presented, where the bit-line capacitance is effectively reduced to benefit the speed and energy of the read operation. While achieving benefits in read operation, the area overhead of the SLS SOT-MRAM cell can be efficiently reduced by sharing the source line among 4 cells. The HSPICE circuit simulations using the 28 nm CMOS technology show that the proposed SLS 2T SOT-MRAM cell achieves the read energy improvement of 28.5% and read speed improvement of 37.8% while showing only 6.25% of area overhead.

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference 2022, ISOCC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781665459716
Publication statusPublished - 2022
Event19th International System-on-Chip Design Conference, ISOCC 2022 - Gangneung-si, Korea, Republic of
Duration: 2022 Oct 192022 Oct 22

Publication series

NameProceedings - International SoC Design Conference 2022, ISOCC 2022


Conference19th International System-on-Chip Design Conference, ISOCC 2022
Country/TerritoryKorea, Republic of

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This work was supported by National R&D Program through the National Research Foundation of Korea funded by the Ministry of Science and ICT (NRF-2020M3F3A2A01082591). The EDA tool was supported by the IC Design Education Center(IDEC), Korea.

Publisher Copyright:
© 2022 IEEE.


  • read operation
  • spin-orbit torque (SOT) mram

ASJC Scopus subject areas

  • Artificial Intelligence
  • Computer Science Applications
  • Hardware and Architecture
  • Safety, Risk, Reliability and Quality


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